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"New optimized Dual-Material (DM) gate design to improve the submicron ..."

N. Lakhdar, Fayçal Djeffal (2012)

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DOI: 10.1016/J.MICROREL.2011.11.014

access: closed

type: Journal Article

metadata version: 2020-02-22

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N. Lakhdar, Fayçal Djeffal:
New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime. Microelectron. Reliab. 52(6): 958-963 (2012)

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