"Resistive switching properties of alkaline earth oxide-based memory devices."

Ke-Jing Lee et al. (2018)

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DOI: 10.1016/J.MICROREL.2017.06.080

access: closed

type: Journal Article

metadata version: 2020-02-22

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Ke-Jing Lee, Yu-Chi Chang, Cheng-Jung Lee, Li-Wen Wang, Yeong-Her Wang:
Resistive switching properties of alkaline earth oxide-based memory devices. Microelectron. Reliab. 83: 281-285 (2018)

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