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"Epitaxial growth of LaAlO3 on Si(0 0 1) using interface ..."

Clement Merckling et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.01.036

access: closed

type: Journal Article

metadata version: 2023-11-09

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Clement Merckling, G. Delhaye, Mario El Kazzi, S. Gaillard, Yoann Rozier, L. Rapenne, B. Chenevier, O. Marty, G. Saint-Girons, M. Gendry, Y. Robach, G. Hollinger:
Epitaxial growth of LaAlO₃ on Si(0 0 1) using interface engineering. Microelectron. Reliab. 47(4-5): 540-543 (2007)

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