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"NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase."
A. Shickova et al. (2007)
- A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, Herman E. Maes, Guido Groeseneken, J. A. Kittl:
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. Microelectron. Reliab. 47(4-5): 505-507 (2007)
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