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"A 11-Transistor Nanoscale CMOS Memory Cell for Hardening to Soft Errors."

Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi (2011)

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DOI: 10.1109/TVLSI.2010.2043271

access: closed

type: Journal Article

metadata version: 2022-06-23

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Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi:
A 11-Transistor Nanoscale CMOS Memory Cell for Hardening to Soft Errors. IEEE Trans. Very Large Scale Integr. Syst. 19(5): 900-904 (2011)

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