"Process Development and Device Characteristics of Aluminum Gallium ..."

Donghyun Kim (2008)

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type: Book or Thesis

metadata version: 2024-08-27

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Donghyun Kim:
Process Development and Device Characteristics of Aluminum Gallium Nitride/gallium Nitride HEMTs for High Frequency Applications. University of Illinois Urbana-Champaign, USA, 2008

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