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@inproceedings{DBLP:conf/isscc/KangKJJPCSKKKLK19, author = {Dongku Kang and Minsu Kim and Suchang Jeon and Wontaeck Jung and Jooyong Park and Gyo Soo Choo and Dong{-}Kyo Shim and Anil Kavala and Seungbum Kim and Kyung{-}Min Kang and Jiyoung Lee and Kuihan Ko and Hyun Wook Park and ByungJun Min and Changyeon Yu and Sewon Yun and Nahyun Kim and Yeonwook Jung and Sungwhan Seo and Sunghoon Kim and Moo Kyung Lee and Joo{-}Yong Park and James C. Kim and Young San Cha and Kwangwon Kim and Youngmin Jo and Hyun{-}Jin Kim and Youngdon Choi and Jindo Byun and Ji{-}hyun Park and Kiwon Kim and Tae{-}Hong Kwon and Young{-}Sun Min and Chiweon Yoon and Youngcho Kim and Dong{-}Hun Kwak and Eungsuk Lee and Wook{-}Ghee Hahn and Ki{-}Sung Kim and Kyungmin Kim and Euisang Yoon and Wontae Kim and Inryul Lee and Seunghyun Moon and Jeong{-}Don Ihm and Dae{-}Seok Byeon and Ki{-}Whan Song and Sangjoon Hwang and Kyehyun Kyung}, title = {A 512Gb 3-bit/Cell 3D 6\({}^{\mbox{th}}\)-Generation {V-NAND} Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface}, booktitle = {{IEEE} International Solid- State Circuits Conference, {ISSCC} 2019, San Francisco, CA, USA, February 17-21, 2019}, pages = {216--218}, publisher = {{IEEE}}, year = {2019}, url = {https://doi.org/10.1109/ISSCC.2019.8662493}, doi = {10.1109/ISSCC.2019.8662493}, timestamp = {Fri, 06 Aug 2021 01:00:00 +0200}, biburl = {https://dblp.org/rec/conf/isscc/KangKJJPCSKKKLK19.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/isscc/KimCJPPKKLLKPAL17, author = {Chulbum Kim and Ji{-}Ho Cho and Woopyo Jeong and Il{-}Han Park and Hyun Wook Park and Doo{-}Hyun Kim and Daewoon Kang and Sunghoon Lee and Ji{-}Sang Lee and Wontae Kim and Jiyoon Park and Yang{-}Lo Ahn and Jiyoung Lee and Jong{-}Hoon Lee and Seungbum Kim and Hyun{-}Jun Yoon and Jaedoeg Yu and Nayoung Choi and Yelim Kwon and Nahyun Kim and Hwajun Jang and Jonghoon Park and Seunghwan Song and Yongha Park and Jinbae Bang and Sangki Hong and Byunghoon Jeong and Hyun{-}Jin Kim and Chunan Lee and Young{-}Sun Min and Inryul Lee and In{-}Mo Kim and Sunghoon Kim and Dongkyu Yoon and Ki{-}Sung Kim and Youngdon Choi and Moosung Kim and Hyunggon Kim and Pansuk Kwak and Jeong{-}Don Ihm and Dae{-}Seok Byeon and Jin{-}Yub Lee and Ki{-}Tae Park and Kyehyun Kyung}, title = {11.4 {A} 512Gb 3b/cell 64-stacked {WL} 3D {V-NAND} flash memory}, booktitle = {2017 {IEEE} International Solid-State Circuits Conference, {ISSCC} 2017, San Francisco, CA, USA, February 5-9, 2017}, pages = {202--203}, publisher = {{IEEE}}, year = {2017}, url = {https://doi.org/10.1109/ISSCC.2017.7870331}, doi = {10.1109/ISSCC.2017.7870331}, timestamp = {Thu, 23 Feb 2023 00:00:00 +0100}, biburl = {https://dblp.org/rec/conf/isscc/KimCJPPKKLLKPAL17.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
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