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@inproceedings{DBLP:conf/irps/MatsuyamaSSESHO19,
  author       = {Hideya Matsuyama and
                  Takashi Suzuki and
                  Motoki Shiozu and
                  Hideo Ehara and
                  Takeshi Soeda and
                  Hirokazu Hosoi and
                  Masao Oshima and
                  Kikuo Yamabe},
  title        = {Verification of Copper Stress Migration Under Low Temperature Long
                  Time Stress},
  booktitle    = {{IEEE} International Reliability Physics Symposium, {IRPS} 2019, Monterey,
                  CA, USA, March 31 - April 4, 2019},
  pages        = {1--5},
  publisher    = {{IEEE}},
  year         = {2019},
  url          = {https://doi.org/10.1109/IRPS.2019.8720511},
  doi          = {10.1109/IRPS.2019.8720511},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/irps/MatsuyamaSSESHO19.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

@article{DBLP:journals/mr/HigashiTKSNTMMO17,
  author       = {Yusuke Higashi and
                  Riichiro Takaishi and
                  Koichi Kato and
                  Masamichi Suzuki and
                  Yasushi Nakasaki and
                  Mitsuhiro Tomita and
                  Yuichiro Mitani and
                  Masuaki Matsumoto and
                  Shohei Ogura and
                  Katsuyuki Fukutani and
                  Kikuo Yamabe},
  title        = {Mechanism of gate dielectric degradation by hydrogen migration from
                  the cathode interface},
  journal      = {Microelectron. Reliab.},
  volume       = {70},
  pages        = {12--21},
  year         = {2017},
  url          = {https://doi.org/10.1016/j.microrel.2017.01.011},
  doi          = {10.1016/J.MICROREL.2017.01.011},
  timestamp    = {Sat, 22 Feb 2020 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/mr/HigashiTKSNTMMO17.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

@article{DBLP:journals/mr/SatoYEN16,
  author       = {Soshi Sato and
                  Kikuo Yamabe and
                  Tetsuo Endoh and
                  Masaaki Niwa},
  title        = {Formation mechanism of concave by dielectric breakdown on silicon
                  carbide metal-oxide-semiconductor capacitor},
  journal      = {Microelectron. Reliab.},
  volume       = {58},
  pages        = {185--191},
  year         = {2016},
  url          = {https://doi.org/10.1016/j.microrel.2015.09.016},
  doi          = {10.1016/J.MICROREL.2015.09.016},
  timestamp    = {Sat, 22 Feb 2020 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/mr/SatoYEN16.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

@article{DBLP:journals/mr/HiranoNFGNISMY13,
  author       = {Izumi Hirano and
                  Yasushi Nakasaki and
                  Shigeto Fukatsu and
                  Masakazu Goto and
                  Koji Nagatomo and
                  Seiji Inumiya and
                  Katsuyuki Sekine and
                  Yuichiro Mitani and
                  Kikuo Yamabe},
  title        = {Time-dependent dielectric breakdown {(TDDB)} distribution in n-MOSFET
                  with HfSiON gate dielectrics under {DC} and {AC} stressing},
  journal      = {Microelectron. Reliab.},
  volume       = {53},
  number       = {12},
  pages        = {1868--1874},
  year         = {2013},
  url          = {https://doi.org/10.1016/j.microrel.2013.05.010},
  doi          = {10.1016/J.MICROREL.2013.05.010},
  timestamp    = {Sat, 22 Feb 2020 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/mr/HiranoNFGNISMY13.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}