- Zhiwei Chen, Xinjie Zhao
, Qipei Zhou, Tingli Cheng, Xiang Li, Yujiao Zhang:
An approximate dynamic model of double-sided LCC resonant converter in wireless power transmission based on average current model. Microelectron. J. 152: 106370 (2024) - Tiedong Cheng, Xinlv Gong:
A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference. Microelectron. J. 152: 106389 (2024) - Sunghwan Cho, Byoungdeog Choi:
String-level compact modeling of erase operations in the body-floated vertical channel of 3D charge trapping flash memory. Microelectron. J. 153: 106423 (2024) - Chenghu Dai, Zihua Ren, Lijun Guan, Haitao Liu, Mengya Gao, Wenjuan Lu, Zhiyong Pang, Chunyu Peng, Xiulong Wu:
A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations. Microelectron. J. 144: 106087 (2024) - Prachuryya Subash Das, Deepjyoti Deb, Rupam Goswami, Santanu Sharma, Rajesh Saha:
Fin core dimensionality and corner effect in dual core gate-all-around FinFET. Microelectron. J. 143: 105985 (2024) - Jiale Ding, Yukai Huang, Hao Zhang, Tian Feng, Feida Wang, Dengquan Li, Zhangming Zhu:
A 0.55-mm2 8-bit 32-GS/s TI-SAR ADC with optimized hierarchical sampling architecture. Microelectron. J. 144: 106095 (2024) - Siwan Dong, Menghan Yuan, Sihao Ning:
An 11.36-Bit 405 μW SAR-VCO ADC with single-path differential VCO-based quantizer in 65 nm CMOS. Microelectron. J. 147: 106145 (2024) - Siwan Dong, Ruoyu Zhang, Chuqiang Jing, Menghan Yuan:
A 0.6V 119 dB High-CMRR Low-NEF PGA with common-mode voltage control for ECG recording. Microelectron. J. 146: 106159 (2024) - Zongming Duan, Yun Fang, Haoran Zhu, Bowen Wu, Yan Wang, Yuefei Dai, Hao Gao:
A S-band switchless bi-directional transceiver with a 52% fractional bandwidth in CMOS technology. Microelectron. J. 143: 106036 (2024) - Huali Duan, Erping Li, Qinyi Huang, Yuehang Xu, Wenchao Chen:
Multiphysics simulation study of thermal stress effects in nanoscale FinFETs heterogeneously integrated with GaN high-power device on silicon substrate. Microelectron. J. 150: 106286 (2024) - Shize Duan, Zhenrong Li, Yanhui Wu, Zhen Li, Xuanzhang He, Junyan Leng:
Design and analysis of high-resolution CMOS digitally controlled oscillator with tunable transformer. Microelectron. J. 143: 106060 (2024) - Shize Duan, Zhenrong Li, Yanhui Wu, Xing Quan:
A 28-47.5 GHz broadband power amplifier using improved MCR technique in 40-nm CMOS. Microelectron. J. 152: 106395 (2024) - Samira Ebazadeh, Masoud Meghdadi, Ali Medi:
A symmetrical fully-integrated CMOS doherty power amplifier. Microelectron. J. 148: 106188 (2024) - Anis Ebrahimi, Mostafa Shaterian:
A 4-bit active-inductor-based digitally programmable low noise amplifier (AI-DPLNA) with a tunable and reconfigurable structure. Microelectron. J. 151: 106316 (2024) - Runwu Fan, Benqing Guo, Huifen Wang, Haishi Wang, Jun Chen:
A broadband single-ended active-feedforward -noise-canceling LNA with IP2 enhancement in stacked n/pMOS configurations. Microelectron. J. 149: 106257 (2024) - Qitian Fan, Feng Ran, Limin Yan:
Multi-bit per cycle true random number generator based on XOR-XNOR ring oscillator unit. Microelectron. J. 146: 106142 (2024) - Yuxin Fang, Jialin Zhang, Yongbo Su, Zhi Jin, Yinghui Zhong:
Intrinsic point defects investigation in InAlAs with extrapolated defect transition level. Microelectron. J. 147: 106168 (2024) - Yahui Feng, Hongxia Guo, Wuying Ma, Jiawen Hu, Xiaoping Ouyang, Jinxin Zhang, Fengqi Zhang, Hong Zhang, Ruxue Bai, Xiaohua Ma, Yue Hao:
Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. Microelectron. J. 144: 106058 (2024) - Guolong Fu, Yanbo Zhang, Yan Wang, Zhiyu Zhao, Shubin Liu, Zhangming Zhu:
A 2nd-order noise-shaping SAR-assisted pipeline ADC with order-boosted gain-error-shaping. Microelectron. J. 151: 106353 (2024) - Gagan, Akansha Aggarwal:
Unified multifunctional-reconfigurable architecture for device-circuit co-design. Microelectron. J. 151: 106329 (2024) - Zhiyuan Gao, Siwei He, Xiaopei Shi, Jiangtao Xu:
A leakage-suppressed capacitive-feedback amplifier scheme for event-based vision sensors in scaled-down technology. Microelectron. J. 147: 106183 (2024) - Wen Gao, Xuan Lin, Guorong Li, Hong-Shun Yin, Fei-Long Lv, Peng Zhang, Da-Wei Wang, Wen-Sheng Qian, Hao Zhang, Wen-Sheng Zhao:
Modeling and signal integrity analysis of silicon interposer channels based on MTL and KBNN. Microelectron. J. 147: 106186 (2024) - Wenchao Gao, Wanling Si, Shiling Luo:
A circuit protection method based on replacing minterms with combinatorial circuits. Microelectron. J. 151: 106314 (2024) - Hanqi Gao, Chao Yang, Jing Jin, Jianjun Zhou:
A 2-36 GHz CMOS LNA with π-Network-Based wideband interstage matching technique for software-defined radio systems. Microelectron. J. 153: 106431 (2024) - Sheng Gao, Xianfeng Zhang, Qi Wang, Shengqi Yu, Yang Zuo, Hongsheng Zhang, Yi Huang:
Asymmetric trench SiC MOSFET with integrated channel accumulation diode for enhanced reverse conduction and switching characteristics. Microelectron. J. 153: 106436 (2024) - Lixin Geng, Ruifeng Yue, Yan Wang:
Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices. Microelectron. J. 152: 106387 (2024) - Yunhe Guan, Jiachen Lu, Hao Zhang, Zhen Dou, Haifeng Chen, Feng Liang:
A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors. Microelectron. J. 145: 106118 (2024) - Aastha Gupta, Ravi Sindal, Vaibhav Neema:
Memory architecture to mitigate side channel attacks for cryptographic application using loop cut technique. Microelectron. J. 152: 106374 (2024) - Ya Hai, Fei Liu, Yongshan Wang, Liyin Fu, Jian Huo:
A wide-frequency and high-precision ZQ calibration circuit for NAND Flash memory. Microelectron. J. 143: 106051 (2024) - Tian Han, Fazhan Zhao, Ximing Fu, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Wenxin Zhao, Bo Li:
A precision current sensing circuit with chopper amplifier of symmetric topology. Microelectron. J. 146: 106103 (2024)
