• case-insensitive prefix search: default
  e.g., sig matches "SIGIR" as well as "signal"
• exact word search: append dollar sign ($) to word
  e.g., graph$ matches "graph", but not "graphics"
• boolean and: separate words by space
  e.g., codd model
• boolean or: connect words by pipe symbol (|)
  e.g., graph|network

Update May 7, 2017: Please note that we had to disable the phrase search operator (.) and the boolean not operator (-) due to technical problems. For the time being, phrase search queries will yield regular prefix search result, and search terms preceded by a minus will be interpreted as regular (positive) search terms.

found 7 matches

• 2022
• 
  Mantas Sakalas, Paulius Sakalas:
  A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology. BCICTS 2022: 140-143
• 2021
• 
  Christoph Weimer, Paulius Sakalas, Markus Müller, Gerhard G. Fischer, Michael Schröter:
  An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs. BCICTS 2021: 1-4
• 2020
• 
  Yaxin Zhang, Wenfeng Liang, Xiaodi Jin, Mario Krattenmacher, Sophia Falk, Paulius Sakalas, Bernd Heinemann, Michael Schröter:
  3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. IEEE J. Solid State Circuits 55(6): 1471-1481 (2020)
• 
  Mantas Sakalas, Paulius Sakalas:
  Design of a wideband, 4 - 42.5 GHz Low Noise Amplifier in 0.25 µm GaAs pHEMT Technology. BCICTS 2020: 1-4
• 2019
• 
  Ahmed Omar, Anindya Mukherjee, Wenfeng Liang, Yaxin Zhang, P. Sakalas, Michael Schröter:
  82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency. BCICTS 2019: 1-4
• 
  Paulius Sakalas, Anindya Mukherjee, Michael Schröter:
  Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications. BCICTS 2019: 1-4
• 2002
• 
  Jose Miguel Miranda, Christian Fager, Herbert Zirath, Paulius Sakalas, Sagrario Muñoz, Jose Luis Sebastián:
  Influence of the calibration kit on the estimation of parasitic effects in HEMT devices at microwave frequencies. IEEE Trans. Instrum. Meas. 51(4): 650-655 (2002)