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ORCIDByung-Gook Park
Byunggook Park
Person information
- affiliation: Seoul National University, Department of Electrical and Computer Engineering, South Korea
- affiliation: AT&T Bell Laboratories, Murray Hill, NJ, USA
- affiliation (PhD 1990): Stanford University, CA, USA
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2020 – today
- 2023
[j47]Kannan Udaya Mohanan, Seongjae Cho
, Byung-Gook Park:
Optimization of the structural complexity of artificial neural network for hardware-driven neuromorphic computing application. Appl. Intell. 53(6): 6288-6306 (2023)- [j46]Min-Hye Oh, Kitae Lee, Sihyun Kim, Byung-Gook Park:
Data-driven multi-objective optimization with neural network-based sensitivity analysis for semiconductor devices. Eng. Appl. Artif. Intell. 117(Part): 105546 (2023) - 2022
- [j45]Jiseong Im, Jaehyeon Kim, Honam Yoo, Jong-Won Baek, Dongseok Kwon, Seongbin Oh, Jangsaeng Kim, Joon Hwang, Byung-Gook Park, Jong-Ho Lee:
On-Chip Trainable Spiking Neural Networks Using Time-To-First-Spike Encoding. IEEE Access 10: 31263-31272 (2022) - [j44]Min-Hwi Kim, Sin-Hyung Lee, Sungjun Kim, Byung-Gook Park:
A Fast Weight Transfer Method for Real-Time Online Learning in RRAM-Based Neuromorphic System. IEEE Access 10: 37030-37038 (2022) - [j43]Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim:
4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array. Adv. Intell. Syst. 4(9) (2022) - [c5]Honam Yoo, Jong-Won Back, Nam-Hun Kim, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee:
First Demonstration of 1-bit Erase in Vertical NAND Flash Memory. VLSI Technology and Circuits 2022: 304-305 - 2021
- [j42]Won-Mook Kang, Dongseok Kwon, Sung Yun Woo, Soochang Lee, Honam Yoo, Jangsaeng Kim, Byung-Gook Park, Jong-Ho Lee:
Hardware-Based Spiking Neural Network Using a TFT-Type AND Flash Memory Array Architecture Based on Direct Feedback Alignment. IEEE Access 9: 73121-73132 (2021) - [j41]Seongbin Oh, Soochang Lee, Sung Yun Woo, Dongseok Kwon, Jiseong Im, Joon Hwang, Jong-Ho Bae, Byung-Gook Park, Jong-Ho Lee:
Spiking Neural Networks With Time-to-First-Spike Coding Using TFT-Type Synaptic Device Model. IEEE Access 9: 78098-78107 (2021) - [j40]Dayoung Kim, Tae-Hyeon Kim, Yun-Yeong Choi, Geun-Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim, Hyungsoon Shin:
Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array. IEEE Access 9: 120901-120910 (2021) - [j39]Seunghwan Song, Bosung Jeon, Sungmin Hwang, Myung-Hyun Baek, Jong-Ho Lee, Byung-Gook Park:
Integrate-and-Fire Neuron Circuit With Synaptic Off-Current Blocking Operation. IEEE Access 9: 127841-127851 (2021) - [j38]Min-Woo Kwon, Kyungchul Park, Byung-Gook Park:
Low-Power Adaptive Integrate-and-Fire Neuron Circuit Using Positive Feedback FET Co-Integrated With CMOS. IEEE Access 9: 159925-159932 (2021) - [j37]Hyungyo Kim, Joon Hwang, Dongseok Kwon, Jangsaeng Kim, Min-Kyu Park, Jiseong Im, Byung-Gook Park, Jong-Ho Lee:
Direct Gradient Calculation: Simple and Variation-Tolerant On-Chip Training Method for Neural Networks. Adv. Intell. Syst. 3(8): 2100064 (2021) - [j36]Hyungyo Kim, Joon Hwang, Dongseok Kwon, Jangsaeng Kim, Min Kyu Park, Jiseong Im, Byung-Gook Park, Jong-Ho Lee:
Direct Gradient Calculation: Simple and Variation-Tolerant On-Chip Training Method for Neural Networks. Adv. Intell. Syst. 3(8): 2170059 (2021) - [j35]Jangsaeng Kim, Dongseok Kwon, Sung Yun Woo, Won-Mook Kang, Soochang Lee, Seongbin Oh, Chul-Heung Kim, Jong-Ho Bae, Byung-Gook Park, Jong-Ho Lee:
Hardware-based spiking neural network architecture using simplified backpropagation algorithm and homeostasis functionality. Neurocomputing 428: 153-165 (2021) - [j34]Jangsaeng Kim, Dongseok Kwon, Sung Yun Woo, Won-Mook Kang, Soochang Lee, Seongbin Oh, Chul-Heung Kim, Jong-Ho Bae, Byung-Gook Park, Jong-Ho Lee:
On-chip trainable hardware-based deep Q-networks approximating a backpropagation algorithm. Neural Comput. Appl. 33(15): 9391-9402 (2021) - [i3]Sung Yun Woo, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee, Jong-Ho Bae:
Pulse-Width Modulation Neuron Implemented by Single Positive-Feedback Device. CoRR abs/2108.09954 (2021) - 2020
- [j33]Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, Sungjun Kim:
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering. IEEE Access 8: 130678-130686 (2020) - [j32]Sung Yun Woo, Dongseok Kwon, Nagyong Choi, Won-Mook Kang, Young-Tak Seo, Min Kyu Park, Jong-Ho Bae, Byung-Gook Park, Jong-Ho Lee:
Low-Power and High-Density Neuron Device for Simultaneous Processing of Excitatory and Inhibitory Signals in Neuromorphic Systems. IEEE Access 8: 202639-202647 (2020) - [j31]Dong-Hyun Ryu, Tae-Hyung Kim, Taejin Jang, Junsu Yu, Jong-Ho Lee, Byung-Gook Park:
Double-Gated Asymmetric Floating-Gate-Based Synaptic Device for Effective Performance Enhancement Through Online Learning. IEEE Access 8: 217735-217743 (2020) - [j30]Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park:
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation. IEEE Access 8: 228720-228730 (2020) - [j29]Hyeongsu Kim, Jong-Ho Bae, Suhwan Lim, Sungtae Lee, Young-Tak Seo, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee:
Efficient precise weight tuning protocol considering variation of the synaptic devices and target accuracy. Neurocomputing 378: 189-196 (2020)
2010 – 2019
- 2019
- [j28]Chandreswar Mahata, Wonwoo Kim, Shiwhan Kim, Muhammad Ismail, Min-Hwi Kim, Sungjun Kim, Byung-Gook Park:
Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices. IEICE Electron. Express 16(16): 20190404 (2019) - [j27]Suhwan Lim, Jong-Ho Bae, Jai-Ho Eum, Sungtae Lee, Chul-Heung Kim, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee:
Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices. Neural Comput. Appl. 31(11): 8101-8116 (2019) - [j26]Mihee Uhm, Jin-Moo Lee, Jieun Lee, Jung Han Lee, Sungju Choi, Byung-Gook Park, Dong Myong Kim, Sung-Jin Choi, Hyun-Sun Mo, Yong-Joo Jeong, Dae Hwan Kim:
Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors. Sensors 19(20): 4502 (2019) - [c4]Won-Mook Kang, Chul-Heung Kim, Soochang Lee, Sung Yun Woo, Jong-Ho Bae, Byung-Gook Park, Jong-Ho Lee:
A Spiking Neural Network with a Global Self-Controller for Unsupervised Learning Based on Spike-Timing-Dependent Plasticity Using Flash Memory Synaptic Devices. IJCNN 2019: 1-7 - 2018
- [i2]Soochang Lee, Chul-Heung Kim, Seongbin Oh, Byung-Gook Park, Jong-Ho Lee:
Unsupervised Online Learning With Multiple Postsynaptic Neurons Based on Spike-Timing-Dependent Plasticity Using a TFT-Type NOR Flash Memory Array. CoRR abs/1811.07115 (2018) - 2017
- [i1]Suhwan Lim, Jong-Ho Bae, Jai-Ho Eum, Sungtae Lee, Chul-Heung Kim, Byung-Gook Park, Jong-Ho Lee:
Adaptive Learning Rule for Hardware-based Deep Neural Networks Using Electronic Synapse Devices. CoRR abs/1707.06381 (2017) - 2016
- [j25]Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park:
Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell. IEICE Trans. Electron. 99-C(5): 547-550 (2016) - 2015
- [j24]Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park:
Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals. IEICE Trans. Electron. 98-C(5): 429-433 (2015) - [c3]Mina Yun, Seongjae Cho, Sae-Kyoung Kang, Sunghun Jung, Byung-Gook Park:
Ge-on-Si photodetector with novel metallization schemes for on-chip optical interconnect. ISCE 2015: 1-2 - 2014
- [j23]Seongjae Cho, Sunghun Jung, Sungjun Kim, Byung-Gook Park:
Vertical stack array of one-time programmable nonvolatile memory based on pn-junction diode and its operation scheme for faster access. IEICE Electron. Express 11(4): 20131041 (2014) - 2013
- [j22]Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park:
L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications. IEICE Trans. Electron. 96-C(5): 634-638 (2013) - [j21]Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Byung-Gook Park:
Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel. IEICE Trans. Electron. 96-C(5): 639-643 (2013) - 2012
- [j20]Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, James S. Harris Jr.:
Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance. IEICE Electron. Express 9(9): 828-833 (2012) - [j19]Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Byung-Gook Park:
Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region. IEICE Trans. Electron. 95-C(5): 820-825 (2012) - [j18]Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, Byung-Gook Park:
Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors. IEICE Trans. Electron. 95-C(5): 826-830 (2012) - [j17]Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, Hyungjin Kim, Byung-Gook Park:
Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer). IEICE Trans. Electron. 95-C(5): 837-841 (2012) - [j16]Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hyungjin Kim, Byung-Gook Park:
Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics. IEICE Trans. Electron. 95-C(5): 842-846 (2012) - 2011
- [j15]Gil Sung Lee, Doo-Hyun Kim, Seongjae Cho, Byung-Gook Park:
A New 1T DRAM Cell: Cone Type 1T DRAM Cell. IEICE Trans. Electron. 94-C(5): 681-685 (2011) - [j14]Myounggon Kang, Ki-Whan Song, Byung-Gook Park, Hyungcheol Shin:
The novel SCR-based ESD protection with low triggering and high holding voltages. Microelectron. J. 42(6): 837-839 (2011) - 2010
- [j13]Dong-Seup Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jung Han Lee, Seongjae Cho, Byung-Gook Park:
Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer. IEICE Trans. Electron. 93-C(5): 540-545 (2010) - [j12]Seongjae Cho, Jung Hoon Lee, Yoon Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park:
Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices. IEICE Trans. Electron. 93-C(5): 596-601 (2010)
2000 – 2009
- 2009
- [j11]Seongjae Cho, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL). IEICE Trans. Electron. 92-C(5): 620-626 (2009) - [j10]Jongwook Jeon, Ickhyun Song, Jong Duk Lee, Byung-Gook Park, Hyungcheol Shin:
Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design. IEICE Trans. Electron. 92-C(5): 627-634 (2009) - [j9]Sang Hyuk Park, Sangwoo Kang, Seongjae Cho, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park:
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation. IEICE Trans. Electron. 92-C(5): 647-652 (2009) - [j8]Yoon Kim, Seongjae Cho, Gil Sung Lee, Il-Han Park, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array. IEICE Trans. Electron. 92-C(5): 653-658 (2009) - [j7]Doo-Hyun Kim, Il-Han Park, Seongjae Cho, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory. IEICE Trans. Electron. 92-C(5): 659-663 (2009) - [j6]Byung-Gook Park, Jae Young Song, Jong Pil Kim, Hoon Jeong, Jung Hoon Lee, Seongjae Cho:
Nanosculpture: Three-dimensional CMOS device structures for the ULSI era. Microelectron. J. 40(4-5): 769-772 (2009) - 2008
- [j5]Seongjae Cho, Il-Han Park, Jung Hoon Lee, Jang-Gn Yun, Doo-Hyun Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI). IEICE Trans. Electron. 91-C(5): 731-735 (2008) - [j4]Jang-Gn Yun, Il-Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Jong Duk Lee, Byung-Gook Park:
Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme. IEICE Trans. Electron. 91-C(5): 742-746 (2008) - 2007
- [j3]Jong Pil Kim, Woo Young Choi, Jae Young Song, Seongjae Cho, Sang Wan Kim, Jong Duk Lee, Byung-Gook Park:
Design and Simulation of Asymmetric MOSFETs. IEICE Trans. Electron. 90-C(5): 978-982 (2007) - [j2]Seongjae Cho, Jang-Gn Yun, Il-Han Park, Jung Hoon Lee, Jong Pil Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices. IEICE Trans. Electron. 90-C(5): 988-993 (2007) - 2004
- [j1]Hyuck In Kwon, In Man Kang, Byung-Gook Park, Jong Duk Lee, Sang Sik Park, Jung Chak Ahn, Yong Hee Lee:
Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements. Microelectron. Reliab. 44(1): 47-51 (2004) - 2003
- [c2]Woo Young Choi, Jong Duk Lee, Byung-Gook Park:
Reverse-order source/drain formation with double offset spacer (RODOS) for CMOS low-power, high-speed and low-noise amplifiers. ISLPED 2003: 189-192 - [c1]Ki-Whan Song, Sang-Hoon Lee, Dae Hwan Kim, Kyung Rok Kim, Jaewoo Kyung, Gwanghyeon Baek, Chun-An Lee, Jong Duk Lee, Byung-Gook Park:
Complementary Self-Biased Scheme for the Robust Design of CMOS/SET Hybrid Multi-Valued Logic. ISMVL 2003: 267-272
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