"Simulation Study on Dependence of Channel Potential Self-Boosting on ..."

Seongjae Cho et al. (2010)

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DOI: 10.1587/TRANSELE.E93.C.596

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/ChoLKYSP10
Seongjae Cho, Jung Hoon Lee, Yoon Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park:
Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices. IEICE Trans. Electron. 93-C(5): 596-601 (2010)

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