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Dimitris Pavlidis
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2010 – 2019
- 2018
- [j11]Pablo Salinas, Dimitris Pavlidis, Ziqing Xie, H. Osman, Christopher C. Pain, Matthew David Jackson:
A discontinuous control volume finite element method for multi-phase flow in heterogeneous porous media. J. Comput. Phys. 352: 602-614 (2018) - 2016
- [j10]Alexandros Adam, Dimitris Pavlidis, James R. Percival, Pablo Salinas, Ziqing Xie, Fangxin Fang, Christopher C. Pain, A. H. Muggeridge, Matthew David Jackson:
Higher-order conservative interpolation between control-volume meshes: Application to advection and multiphase flow problems with dynamic mesh adaptivity. J. Comput. Phys. 321: 512-531 (2016) - [j9]Pan Yang, Jiansheng Xiang, Fangxin Fang, Dimitris Pavlidis, John-Paul Latham, Christopher C. Pain:
Modelling of fluid-structure interaction with multiphase viscous flows using an immersed-body method. J. Comput. Phys. 321: 571-592 (2016) - 2012
- [j8]Chong Jin, Dimitris Pavlidis, Laurence Considine:
DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication. IEICE Trans. Electron. 95-C(8): 1348-1353 (2012) - [j7]Masayuki Abe, Noriaki Kogushi, Kian Siong Ang, René Hofstetter, Kumar Manoj, Louis Nicholas Retnam, Hong Wang, Geok Ing Ng, Chong Jin, Dimitris Pavlidis:
High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application. IEICE Trans. Electron. 95-C(8): 1354-1362 (2012) - [j6]Arnaud Stolz, Laurence Considine, Elhadj Dogheche, Didier Decoster, Dimitris Pavlidis:
Prospective for Gallium Nitride-Based Optical Waveguide Modulators. IEICE Trans. Electron. 95-C(8): 1363-1368 (2012) - 2010
- [j5]Sanghyun Seo, Eunjung Cho, Giorgi Aroshvili, Chong Jin, Dimitris Pavlidis, Laurence Considine:
Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4. IEICE Trans. Electron. 93-C(8): 1245-1250 (2010)
2000 – 2009
- 2008
- [j4]Sanghyun Seo, Kaustav Ghose, Guangyuan Zhao, Dimitris Pavlidis:
AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate. IEICE Trans. Electron. 91-C(7): 994-1000 (2008) - [j3]Jochen Sigmund, Jean-François Lampin, Valentin Ivannikov, Cezary Sydlo, Michail Feiginov, Dimitris Pavlidis, Peter Meissner, Hans L. Hartnagel:
Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements. IEICE Trans. Electron. 91-C(7): 1058-1062 (2008) - 2006
- [j2]Oktay Yilmazoglu, Kabula Mutamba, Dimitris Pavlidis, Marie Rose Mbarga:
Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications. IEICE Trans. Electron. 89-C(7): 1037-1041 (2006) - [j1]Eunjung Cho, Dimitris Pavlidis, Guangyuan Zhao, Seth M. Hubbard, Johannes Schwank:
Improvement of CO Sensitivity in GaN-Based Gas Sensors. IEICE Trans. Electron. 89-C(7): 1047-1051 (2006)
Coauthor Index
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