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ORCIDBo Yi 0003
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- Bo Yi — disambiguation page
- Bo Yi 0001
![[0000-0002-2351-1351]](https://dblp.org/img/orcid-mark.12x12.png "0000-0002-2351-1351")
- Bo Yi 0002
- Bo Yi 0004
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Journal Articles
- 2025
[j7]Moufu Kong, Ning Yu, Yaowen Zhang, Zeyu Cheng, Bingke Zhang, Bo Yi, Hongqiang Yang:
High-voltage GaN HEMT with self-biased P-GaN VLD layer for improved breakdown voltage and figure of merit. Microelectron. J. 156: 106536 (2025)- [j6]Moufu Kong, Qizhi Feng, Hongfei Deng, Zhaoyu Ai, Mingliang Yang, Ning Yu, Bingke Zhang, Bo Yi, Hongqiang Yang:
A new concept high-k GaN FinFET with integrated SBD breaking the unipolar limit of GaN and realizing excellent reverse recovery performance. Microelectron. J. 164: 106798 (2025) - 2024
- [j5]Moufu Kong, Hongfei Deng, Yingzhi Luo, Jiayan Zhu, Bo Yi, Hongqiang Yang, Qiang Hu, Fanxin Meng:
Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques. Microelectron. J. 150: 106261 (2024) - 2023
- [j4]Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, MouFu Kong, Hongqiang Yang:
Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design. Microelectron. J. 139: 105895 (2023) - 2020
- [j3]Junji Cheng, Jingjie Lin, Weizhen Chen, Shiying Wu, Haimeng Huang, Bo Yi:
Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance. IEEE Access 8: 48991-48999 (2020) - [j2]Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang:
Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. IEICE Electron. Express 17(2): 20190673 (2020) - 2019
- [j1]Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, MouFu Kong:
SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield. IEICE Electron. Express 16(5): 20181135 (2019)
Conference and Workshop Papers
- 2023
- [c9]Moufu Kong, Ke Huang, Ronghe Yan, Bo Yi, Bingke Zhang, Hongqiang Yang:
A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance. ASICON 2023: 1-4 - [c8]Moufu Kong, Zhi Lin, Hongfei Deng, Bo Yi, Rui Jin, Hongqiang Yang:
A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance. ASICON 2023: 1-4 - [c7]Bo Yi, Haimeng Huang, Haoran Hu, MouFu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang:
Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. ASICON 2023: 1-4 - 2021
- [c6]Moufu Kong, Zewei Hu, Jiacheng Gao, Zongqi Chen, Jiaxin Guo, Sadaf Ali Nafees, Bo Yi, Hongqiang Yang:
A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics. ASICON 2021: 1-4 - [c5]Moufu Kong, Ke Huang, Bin Wang, Cong Liu, Bo Yi, Hongqiang Yang:
A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance. ASICON 2021: 1-4 - [c4]Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi:
A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances. ASICON 2021: 1-4 - [c3]Bo Yi, Zheng Wu, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang:
A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp. ASICON 2021: 1-4 - 2019
- [c2]Rongxin Chen, Bo Yi, MouFu Kong, Xingbi Chen:
Simulation Study of Trench IGBT with Diode-Clamped P-Well for High dI/dt and dV/dt Controllability. ASICON 2019: 1-4 - [c1]Cong Liu, MouFu Kong, Hanzhi Chen, Bo Yi, Bingke Zhang, Xingbi Chen:
Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes. ASICON 2019: 1-4
Coauthor Index
aka: Moufu Kong
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