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R. Kinder

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2000 – 2009

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2007
[j2]
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  - journals/mj/KinderSBG07
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R. Kinder, F. Schwierz, P. Beno, J. Geßner:
Simulation of boron diffusion in Si and strained SiGe layers. Microelectron. J. 38(4-5): 576-582 (2007)
2006
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R. Kinder, A. Vincze, M. Kuruc, R. Srnánek, B. Lojek, B. Sopko, D. Chren:
Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer. Microelectron. J. 37(7): 642-645 (2006)

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