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ORCIDAnton J. Bauer
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2010 – 2019
- 2011
[j10]Martin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Investigation of the reliability of 4H-SiC MOS devices for high temperature applications. Microelectron. Reliab. 51(8): 1346-1350 (2011)
2000 – 2009
- 2007
- [j9]Martin Lemberger, A. Baunemann, Anton J. Bauer:
Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors. Microelectron. Reliab. 47(4-5): 635-639 (2007) - [j8]Mathias Rommel
, Anton J. Bauer, Heiner Ryssel:
Quantitative oxide charge determination by photocurrent analysis. Microelectron. Reliab. 47(4-5): 673-677 (2007) - [j7]Albena Paskaleva, Martin Lemberger, Anton J. Bauer:
Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers. Microelectron. Reliab. 47(12): 2094-2099 (2007) - 2005
- [j6]Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. Microelectron. Reliab. 45(5-6): 819-822 (2005) - [j5]Albena Paskaleva, Anton J. Bauer, Martin Lemberger:
Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films. Microelectron. Reliab. 45(7-8): 1124-1133 (2005) - 2003
- [j4]Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. Microelectron. Reliab. 43(8): 1253-1257 (2003) - 2001
- [j3]Michael P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. Microelectron. Reliab. 41(7): 987-990 (2001) - [j2]S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel:
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices. Microelectron. Reliab. 41(7): 1085-1088 (2001) - [j1]Matthias Beichele, Anton J. Bauer, Heiner Ryssel:
Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient. Microelectron. Reliab. 41(7): 1089-1092 (2001)
Coauthor Index
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