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Toshiyuki Oishi

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2010 – 2019

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2019
[c2]
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  dblp key:
  - conf/bcicts/Otsuka0SO19
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  - https://dblp.org/rec/conf/bcicts/Otsuka0SO19
Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Toshiyuki Oishi:
Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation. BCICTS 2019: 1-4
2018
[c1]
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Yutaro Yamaguchi, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo, Toshiyuki Oishi:
Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement. BCICTS 2018: 48-51
2014
[j1]
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  - journals/mr/SasakiKKKYOH14
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Hajime Sasaki, Kaoru Kadoiwa, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto, Toshiyuki Oishi, Kazuo Hayashi:
Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation. Microelectron. Reliab. 54(12): 2662-2667 (2014)

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