Microelectronics Reliability, Volume 54

Volume 54, Number 1, January 2014

Introductory Invited Paper

• 
  F. Medjdoub:
  Ultrathin barrier GaN-on-Silicon devices for millimeter wave applications. 1-12

Review Paper

• 
  Soufyane Belhenini, Abdellah Tougui, Abdelhake Bouchou, Franck Dosseul:
  3D finite element modeling of 3D C2W (chip to wafer) drop test reliability: Optimization of internal architecture and materials. 13-21

Research Papers

• 
  Filippo Alagi:
  A study of the interface-trap activation kinetics in the Negative Bias Temperature Instability. 22-29
• 
  Meng Zhang, Wei Zhou, Rongsheng Chen, Man Wong, Hoi-Sing Kwok:
  Water-enhanced negative bias temperature instability in p-type low temperature polycrystalline silicon thin film transistors. 30-32
• 
  Ivan A. Starkov, Alexander S. Starkov:
  Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress. 33-36
• 
  Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta:
  Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity. 37-43
• 
  Mehdi Saeidmanesh, Meisam Rahmani, H. Karimi Feiz Karimi, M. Khaledian, Razali Ismail:
  Analytical model for threshold voltage of double gate bilayer graphene field effect transistors. 44-48
• 
  Josef Lutz, Roman Baburske:
  Some aspects on ruggedness of SiC power devices. 49-56
• 
  Qiang Cui, Srivatsan Parthasarathy, Javier A. Salcedo, Juin J. Liou, Jean-Jacques Hajjar, Yuanzhong Paul Zhou:
  Design optimization of SiGe BiCMOS Silicon Controlled Rectifier for Charged Device Model (CDM) protection applications. 57-63
• 
  Po-Yen Chiu, Ming-Dou Ker:
  Metal-layer capacitors in the 65 nm CMOS process and the application for low-leakage power-rail ESD clamp circuit. 64-70
• 
  Ming-Dou Ker, Wan-Yen Lin, Cheng-Cheng Yen:
  SCR-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance. 71-78
• 
  Vladimir Dj. Vukic, Predrag Osmokrovic:
  Failure of the negative voltage regulator in medium-photon-energy X radiation fields. 79-89
• 
  Vijay Kumar Sharma, Manisha Pattanaik, Balwinder Raj:
  PVT variations aware low leakage INDEP approach for nanoscale CMOS circuits. 90-99
• 
  Brijesh Kumar, Brajesh Kumar Kaushik, Yuvraj Singh Negi, Vidhi Goswami:
  Single and dual gate OTFT based robust organic digital design. 100-109
• 
  Cecilia Gimeno, Erick Guerrero, Santiago Celma, Concepción Aldea:
  Reliable CMOS adaptive equalizer for short-haul optical networks. 110-118
• 
  Xiaoli Ji, Chun-bo Wu, Yue Xu, Yi-ming Liao, Jianguang Chang, Li-juang Ma, Feng Yan:
  The promising multi-bit/level programming operations for nano-scaled SONOS memory. 119-123
• 
  Yuanyuan Chen, Bin Sun, Tianhe Ma, Xiaohan Sun:
  Thermal management for high-power photonic crystal light emitting diodes. 124-130
• 
  Dae-Suk Kim, Bongtae Han, Youn-Jea Kim:
  Degradation analysis of secondary lens system and its effect on performance of LED-based luminaire. 131-137
• 
  M. Yazdan Mehr, W. D. van Driel, Kaspar M. B. Jansen, P. Deeben, G. Q. Zhang:
  Lifetime assessment of Bisphenol-A Polycarbonate (BPA-PC) plastic lens, used in LED-based products. 138-142
• 
  Kamal Medjaher, Haithem Skima, Noureddine Zerhouni:
  Condition assessment and fault prognostics of microelectromechanical systems. 143-151
• 
  Y. Q. Zhu, H. Qian, L. F. Wang, Lei Wang, J. Y. Tang:
  Measurement and analysis of substrate leakage current of RF mems capacitive switches. 152-159
• 
  Chaonan Wang, Liudong Xing, Vinod Vokkarane, Yan Lindsay Sun:
  Reliability and lifetime modeling of wireless sensor nodes. 160-166
• 
  J. S. Yuan, S. Chen:
  Power amplifier resilient design for process and temperature variations using an on-chip PLL sensing signal. 167-171
• 
  Mahera Musallam, Chunyan Yin, Chris Bailey, C. Mark Johnson:
  Application of coupled electro-thermal and physics-of-failure-based analysis to the design of accelerated life tests for power modules. 172-181
• 
  Raffaele Fucci, Laura Lancellotti, Carlo Privato:
  A procedure for assessing the reliability of short circuited concentration photovoltaic systems in outdoor degradation conditions. 182-187
• 
  Hong Yang, He Wang, Chuanke Chen, Dingyue Cao, Huacong Yu:
  Effect of binding force between silver paste and silicon on power degradation of crystalline silicon solar module. 188-191
• 
  Lech Z. Hasse, Sylwia Babicz, Leszek Kaczmarek, Janusz M. Smulko, Vlasta Sedlakova:
  Quality assessment of ZnO-based varistors by 1/f noise. 192-199
• 
  Z. Pruszowski, M. Ciez:
  The influence of electroless metallization process parameters on basic electric properties of Ni-P alloy. 200-203
• 
  Abdellah Salahouelhadj, Marion Martiny, Sebastien Mercier, Laurent Bodin, David Manteigas, B. Stephan:
  Reliability of thermally stressed rigid-flex printed circuit boards for High Density Interconnect applications. 204-213
• 
  Elviz George, Michael G. Pecht:
  Tin whisker analysis of an automotive engine control unit. 214-219
• 
  Pedro Quintero, F. Patrick McCluskey, B. Koene:
  Thermomechanical reliability of a silver nano-colloid die attach for high temperature applications. 220-225
• 
  Fang Liu, Guang Meng:
  Random vibration reliability of BGA lead-free solder joint. 226-232
• 
  Yee-Wen Yen, Ruo-Syun Syu, Chih-Ming Chen, Chien-Chung Jao, Guan-Da Chen:
  Interfacial reactions of Sn-58Bi and Sn-0.7Cu lead-free solders with Alloy 42 substrate. 233-238
• 
  Mathias Ekpu, Raj S. Bhatti, Michael I. Okereke, Sabuj Mallik, Kenny C. Otiaba:
  Fatigue life of lead-free solder thermal interface materials at varying bond line thickness in microelectronics. 239-244
• 
  Jiaxing Liang, Tingbi Luo, Anmin Hu, Ming Li:
  Formation and growth of interfacial intermetallic layers of Sn-8Zn-3Bi-0.3Cr on Cu, Ni and Ni-W substrates. 245-251
• 
  Jun Shen, Zhongming Cao, Dajun Zhai, Mali Zhao, Peipei He:
  Effect of isothermal aging and low density current on intermetallic compound growth rate in lead-free solder interface. 252-258
• 
  Lijuan Liu, Ping Wu, Wei Zhou:
  Effects of Cu on the interfacial reactions between Sn-8Zn-3Bi-xCu solders and Cu substrate. 259-264
• 
  Myong-Hoon Roh, Jae Pil Jung, Won Joong Kim:
  Microstructure, shear strength, and nanoindentation property of electroplated Sn-Bi micro-bumps. 265-271
• 
  Jussi Putaala, Jari Hannu, Esa Kunnari, Matti Mäntysalo, Olli Nousiainen, Heli Jantunen:
  Reliability of SMD interconnections on flexible low-temperature substrates with inkjet-printed conductors. 272-280
• 
  Liang Zhang, Ji-guang Han, Yong-huan Guo, Cheng-wen He:
  Anand model and FEM analysis of SnAgCuZn lead-free solder joints in wafer level chip scale packaging devices. 281-286
• 
  Jun-Hsien Yeh, Tsung-Nan Tsai:
  Optimizing the fine-pitch copper wire bonding process with multiple quality characteristics using a grey-fuzzy Taguchi method. 287-296
• 
  Mohamed H. A. Elnaggar:
  Numerical investigation of characteristics of wick structure and working fluid of U-shape heat pipe for CPU cooling. 297-302
• 
  Mirko R. Kosanovic, Mile K. Stojcev:
  RPATS - Reliable power aware time synchronization protocol. 303-315
• 
  Aiman H. El-Maleh, Feras Chikh Oughali:
  A generalized modular redundancy scheme for enhancing fault tolerance of combinational circuits. 316-326

Research Notes

• 
  Hans de Vries, Kunigunde Cherenack:
  Endurance behavior of conductive yarns. 327-330
• 
  Yue Xu, Chun-bo Wu, Xiaoli Ji, Feng Yan:
  An 8-level 3-bit cell programming technique in NOR-type nano-scaled SONOS memory devices. 331-334
• 
  Zhen Gao, Pedro Reviriego, X. Li, Juan Antonio Maestro, Ming Zhao, J. Wang:
  A fault tolerant implementation of the Goertzel algorithm. 335-337
• 
  Pedro Reviriego, Salvatore Pontarelli, Juan Antonio Maestro, Marco Ottavi:
  Efficient implementation of error correction codes in hash tables. 338-340

Volume 54, Number 2, February 2014

Special Section : Selected papers of 2013 Reliability of Compound Semiconductors Workshop

• 
  Peter Ersland, Roberto Menozzi:
  Editorial. 341
• 
  Leslie Marchut, Michael G. Meeder, Terrence Stark:
  Process reliability screening in situ. 342-348
• 
  Dario Nappa, Gergana I. Drandova:
  Estimating activation energies for multi-mode failures. 349-353
• 
  Charles S. Whitman:
  Methodology for predicting off-state reliability in GaN power transistors. 354-359
• 
  William J. Roesch, Philip Rains:
  Separating HBT wearout from defects during early life operation. 360-365

Introductory Invited Paper

• 
  Luc Saury:
  Parametric defect localization on integrated circuits - From static laser stimulation to real-time variation mapping (RTVM). 366-373

Research Papers

• 
  Jifa Hao, Mark Rioux, Samia A. Suliman, Osama O. Awadelkarim:
  High temperature bias-stress-induced instability in power trench-gated MOSFETs. 374-380
• 
  Elena Atanassova, Nenad Novkovski, Dencho Spassov, Albena Paskaleva, Aleksandar Skeparovski:
  Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta₂O₅/SiO₂ stack. 381-387
• 
  Cong Ye, Chao Zhan, Jieqiong Zhang, Hao Wang, Tengfei Deng, Shiruo Tang:
  Influence of rapid thermal annealing temperature on structure and electrical properties of high permittivity HfTiO thin film used in MOSFET. 388-392
• 
  J. X. Chen, Jing-Ping Xu, Lu Liu, X. D. Huang, Pui To Lai:
  Improved performance by using TaON/SiO₂ as dual tunnel layer in Charge-Trapping nonvolatile memory. 393-396
• 
  Engin Afacan, Günhan Dündar, I. Faik Baskaya:
  Reliability assessment of CMOS differential cross-coupled LC oscillators and a novel on chip self-healing approach against aging phenomena. 397-403
• 
  Lingfeng Mao:
  Quantum coupling effects on charging dynamics of nanocrystalline memory devices. 404-409
• 
  Jeong-Won Yoon, Bo-In Noh, Seung-Boo Jung:
  Electrical properties and electrochemical migration characteristics of directly printed Ag patterns with various sintering conditions. 410-416
• 
  Lutz Merkle, Marcus Sonner, Matthias Petzold:
  Lifetime prediction of thick aluminium wire bonds for mechanical cyclic loads. 417-424
• 
  He Ma, Daquan Yu, Jun Wang:
  The development of effective model for thermal conduction analysis for 2.5D packaging using TSV interposer. 425-434
• 
  Chaoran Yang, Fubin Song, S. W. Ricky Lee:
  Impact of Ni concentration on the intermetallic compound formation and brittle fracture strength of Sn-Cu-Ni (SCN) lead-free solder joints. 435-446
• 
  Ahmad Mayyas, Awni Qasaimeh, Peter Borgesen, Michael Meilunas:
  Effects of latent damage of recrystallization on lead free solder joints. 447-456
• 
  Olivér Krammer:
  Modelling the self-alignment of passive chip components during reflow soldering. 457-463
• 
  Michael Merrett, Mark Zwolinski:
  Monte Carlo Static Timing Analysis with statistical sampling. 464-474
• 
  Mehdi Habibi, Hossein Pourmeidani:
  A hierarchical defect repair approach for hybrid nano/CMOS memory reliability enhancement. 475-484

Research Note

• 
  Wen-Teng Chang, Chun-Ming Lai, Wen-Kuan Yeh:
  Reliability of the doping concentration in an ultra-thin body and buried oxide silicon on insulator (SOI) and comparison with a partially depleted SOI. 485-489

Book Review

• 
  Chong Leong Gan, Classe Francis, Bak Lee Chan, Uda Hashim:
  Copper Wire Bonding, Preeti S., Chauhan, Anupam Choubey, ZhaoWei Zhong, Michael G. Pecht, Springer (2014). XXVI, pp 235, ISBN: 978-1-4614-5760-2 (Print), 978-1-4614-5761-9 (Online). 490

Volume 54, Number 3, March 2014

Introductory Invited Papers

• 
  Nilesh Goel, Kaustubh Joshi, S. Mukhopadhyay, N. Nanaware, Souvik Mahapatra:
  A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs. 491-519
• 
  Yoshiki Yonamoto:
  Recovery behavior in negative bias temperature instability. 520-528
• 
  Fen Chen, Michael A. Shinosky:
  Electron fluence driven, Cu catalyzed, interface breakdown mechanism for BEOL low-k time dependent dielectric breakdown. 529-540

Review Paper

• 
  Debanjan Acharyya, Arnab Hazra, Partha Bhattacharyya:
  A journey towards reliability improvement of TiO₂ based Resistive Random Access Memory: A review. 541-560

Research Papers

• 
  Filippo Alagi, Mattia Rossetti, Roberto Stella, Emanuele Viganò:
  A reversible first-order dispersive model of parametric instability. 561-569
• 
  Aditya Kalavagunta, Shubhajit Mukherjee, Robert A. Reed, Ronald D. Schrimpf:
  Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs. 570-574
• 
  R. Zhang, Wen-Sheng Zhao, Wen-Yan Yin:
  Investigation on thermo-mechanical responses in high power multi-finger AlGaN/GaN HEMTs. 575-581
• 
  Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen:
  A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate. 582-586
• 
  Myeongjin Kim, Myeongyeol Yoo, Youngjae Yoo, Jooheon Kim:
  Capacitance behavior of composites for supercapacitor applications prepared with different durations of graphene/nanoneedle MnO₂ reduction. 587-594
• 
  Jie Jin, Chunhua Wang, Jingru Sun, Yuxiang Tu, Lv Zhao, Zanming Xia:
  Novel digitally programmable multiphase voltage controlled oscillator and its stability discussion. 595-600
• 
  Toni T. Mattila, Laura Vajavaara, Jussi Hokka, Esa Hussa, Manu Mäkelä, Ville Halkola:
  Evaluation of the drop response of handheld electronic products. 601-609
• 
  Koustav Sinha, Joe Varghese, Abhijit Dasgupta:
  Effect of geometric complexities and nonlinear material properties on interfacial crack behavior in electronic devices. 610-618
• 
  Jie Zhang, Tian Li, Huiping Wang, Yi Liu, Yingfeng Yu:
  Monitoring extent of curing and thermal-mechanical property study of printed circuit board substrates. 619-628
• 
  Hsi-Kuei Cheng, Shien-Ping Feng, Yi-Jen Lai, Kuo-Chio Liu, Ying-Lang Wang, Tzeng-Feng Liu, Chih-Ming Chen:
  Effect of polyimide baking on bump resistance in flip-chip solder joints. 629-632
• 
  Xi-Shu Wang, Su Jia, Huai-Hui Ren, Pan Pan:
  Effects of solder balls and arrays on the failure behavior in Package-on-Package structure. 633-640
• 
  Jong-Keun Park, Yong-Jun Oh:
  Interfacial microstructures and glass strengthening in anodic-bonded Al sheet/glass and sputtered Al film/glass. 641-647
• 
  Yansong Tan, Xin Li, Xu Chen:
  Fatigue and dwell-fatigue behavior of nano-silver sintered lap-shear joint at elevated temperature. 648-653
• 
  Aiman H. El-Maleh, Ayed S. Al-Qahtani:
  A finite state machine based fault tolerance technique for sequential circuits. 654-661

Corrigendum

• 
  Mahdiar Hosein Ghadiry, Mahdieh Nadi Senejani, M. Bahadoran, Asrulnizam Bin Abd Manaf, H. Karimi, Hatef Sadeghi:
  Corrigendum to "An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors" [Microelectron. Reliability 53 (4) (2013) 540-543]. 662

Volume 54, Number 4, April 2014

Introductory Invited Papers

• 
  Diing Shenp Ang, Chenjie Gu, Z. Y. Tung, A. A. Boo, Yuan Gao:
  Evolution of oxide charge trapping under bias temperature stressing. 663-681
• 
  Louis Gerrer, Jie Ding, Salvatore M. Amoroso, Fikru Adamu-Lema, Razaidi Hussin, Dave Reid, Campbell Millar, A. Asenov:
  Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review. 682-697
• 
  Ming-Long Fan, Shao-Yu Yang, Vita Pi-Ho Hu, Yin-Nien Chen, Pin Su, Ching-Te Chuang:
  Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits. 698-711
• 
  Baozhen Li, Cathryn Christiansen, Dinesh Badami, Chih-Chao Yang:
  Electromigration challenges for advanced on-chip Cu interconnects. 712-724

Original research Papers

• 
  Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
  Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. 725-729
• 
  Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi:
  Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation. 730-737
• 
  Antonio Calomarde, Esteve Amat, Francesc Moll, Julio Vigara, Antonio Rubio:
  SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET. 738-745
• 
  Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken:
  Determination of energy and spatial distribution of oxide border traps in In_0.53Ga_0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. 746-754
• 
  Jiangtao Xu, Dongsheng Li, Lu Yu, Suying Yao:
  A time error model for time-based PWM pixel with correlated double sample in the circumstance of nonlinear response. 755-763
• 
  Vincent Fiori, Komi-Atchou Ewuame, Sébastien Gallois-Garreignot, Hervé Jaouen, Clément Tavernier:
  Numerical analysis of thermo-mechanical and mobility effects for 28 nm node and beyond: Comparison and design consequences over bumping technologies. 764-772
• 
  Chunsheng Zhu, Wenguo Ning, Heng Li, Tao Zheng, Gaowei Xu, Le Luo:
  Void control during plating process and thermal annealing of through-mask electroplated copper interconnects. 773-777
• 
  Wei-Chih Chiu, Bing-Yue Tsui:
  High performance of CNT-interconnects by the multi-layer structure. 778-784
• 
  Toni T. Mattila, Heikki Ruotoistenmäki, Jani Raami, Jussi Hokka, Manu Mäkelä, Esa Hussa, Markku Sillanpää, Ville Halkola:
  An approach to adjust the board-level drop test conditions to improve the correlation with product-level drop impact. 785-795
• 
  C. Y. Khor, Mohd Zulkifly Abdullah, Chun-Sean Lau, W. C. Leong, M. S. Abdul Aziz:
  Influence of solder bump arrangements on molded IC encapsulation. 796-807
• 
  Zhensong Xu, Tielin Shi, Xiangning Lu, Guanglan Liao:
  Using active thermography for defects inspection of flip chip. 808-815
• 
  Hong Gao, Jian-hua Ma, Li-Lan Gao, Dong Zhang:
  Fatigue and resistance analysis of COG modules using electro-mechanical coupling method. 816-824
• 
  Lei Jia, Xinjun Sheng, Zhenhua Xiong, Zhiping Wang, Han Ding:
  Particle on Bump (POB) technique for ultra-fine pitch chip on glass (COG) applications by conductive particles and adhesives. 825-832
• 
  Sanwi Kim, Taek-Soo Kim:
  Adhesion improvement of silicon/underfill/polyimide interfaces by UV/ozone treatment and sol-gel derived hybrid layers. 833-839

Research Note

• 
  Johanna Virkki, Toni Björninen, T. Kellomäki, Sari Merilampi, I. Shafiq, Leena Ukkonen, Lauri Sydänheimo, Y. C. Chan:
  Reliability of washable wearable screen printed UHF RFID tags. 840-846

Volume 54, Number 5, May 2014

Introductory Invited Papers

• 
  Nagarajan Raghavan, Kin Leong Pey, Kalya Shubhakar:
  High-κ dielectric breakdown in nanoscale logic devices - Scientific insight and technology impact. 847-860
• 
  Suman Datta, Huichu Liu, Vijaykrishnan Narayanan:
  Tunnel FET technology: A reliability perspective. 861-874
• 
  Shuji Tanaka:
  Wafer-level hermetic MEMS packaging by anodic bonding and its reliability issues. 875-881

Original Research Articles

• 
  Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil:
  Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique. 882-888
• 
  Yoshiki Yonamoto:
  Recovery and universality in NBTI. 889-892
• 
  C. Meneses, José G. Sánchez, Magali Estrada, Antonio Cerdeira, Josep Pallarès, Benjamín Iñíguez, Lluís F. Marsal:
  Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating. 893-898
• 
  Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai:
  A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. 899-904
• 
  Cheng-I Lin, Yean-Kuen Fang, Wei-Chao Chang, Mao-Wei Chiou, Chih-Wei Chen:
  Effect of gate barrier and channel buffer layer on electric properties and transparence of the a-IGZO thin film transistor. 905-910
• 
  Chien-Pan Liu, Jeng-Yu Lin, Yen-Fu Liu, Shoou-Jinn Chang:
  Facile chemical method of etching polyimide films for failure analysis (FA) applications and its etching mechanism studies. 911-920
• 
  Janina Möreke, Chris Hodges, Laura L. E. Mears, Michael J. Uren, Robert M. Richardson, Martin Kuball:
  Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors. 921-925
• 
  Dongjing Liu, Haiying Yang, Ping Yang:
  Experimental and numerical approach on junction temperature of high-power LED. 926-931
• 
  Tong An, Fei Qin:
  Effects of the intermetallic compound microstructure on the tensile behavior of Sn3.0Ag0.5Cu/Cu solder joint under various strain rates. 932-938
• 
  Ye Tian, Xi Liu, Justin Chow, Yi-Ping Wu, Suresh K. Sitaraman:
  Experimental evaluation of SnAgCu solder joint reliability in 100-μm pitch flip-chip assemblies. 939-944
• 
  Asit Kumar Gain, Y. C. Chan:
  Growth mechanism of intermetallic compounds and damping properties of Sn-Ag-Cu-1 wt% nano-ZrO₂ composite solders. 945-955
• 
  Cory D. Heath, Chau Dinh, C. Doran, S. S. Lau:
  A study of ageing effect at elevated temperature of flexible silicon diodes integrated using conductive adhesives. 956-959
• 
  Cher Ming Tan, Wen Zhi Yu:
  Damage threshold determination and non-destructive identification of possible failure sites in PIN limiter. 960-964
• 
  Mohammad Ghafouri, Mojtaba Parhizkar, Sajedeh Mohammadi Aref, Ali Olad, Hassan Bidadi:
  Effect of temperature on the electrophysical properties of Si-polymer composite varistors. 965-971
• 
  Ephraim Suhir:
  Thermal stress in through-silicon-vias: Theory-of-elasticity approach. 972-977
• 
  Krzysztof Górecki, Malgorzata Rogalska, Janusz Zarebski:
  Parameter estimation of the electrothermal model of the ferromagnetic core. 978-984
• 
  Daniel Arbet, Viera Stopjaková, Juraj Brenkus, Gábor Gyepes, Martin Kovác, Libor Majer:
  BIST architecture for oscillation test of analog ICs and investigation of test hardware influence. 985-992
• 
  Chunlei Wu, Suying Yao:
  A dynamic synchronization method to realize soft defect localization applied on digital and mixed-mode analog ICs in failure analysis. 993-999
• 
  Mojtaba Ebrahimi, Abbas Mohammadi, Alireza Ejlali, Seyed Ghassem Miremadi:
  A fast, flexible, and easy-to-develop FPGA-based fault injection technique. 1000-1008
• 
  Hossein Asadi, Alireza Haghdoost, Morteza Ramezani, Nima Elyasi, Amirali Baniasadi:
  CEDAR: Modeling impact of component error derating and read frequency on system-level vulnerability in high-performance processors. 1009-1021
• 
  Dimitar Nikolov, Urban Ingelsson, Virendra Singh, Erik Larsson:
  Evaluation of Level of Confidence and Optimization of Roll-back Recovery with Checkpointing for Real-Time Systems. 1022-1049
• 
  José Rodrigo Azambuja, Gustavo Brown, Fernanda Lima Kastensmidt, Luigi Carro:
  Algorithm transformation methods to reduce the overhead of software-based fault tolerance techniques. 1050-1055

Volume 54, Numbers 6-7, June - July 2014

1 - 54

• 
  Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou:
  Special section reliability and variability of devices for circuits and systems. 1057
• 
  Martin Barke, Michael Kärgel, Markus Olbrich, Ulf Schlichtmann:
  Robustness measurement of integrated circuits and its adaptation to aging effects. 1058-1065
• 
  Andreas Herkersdorf, Hananeh Aliee, Michael Engel, Michael Glaß, Christina Gimmler-Dumont, Jörg Henkel, Veit Kleeberger, Michael A. Kochte, Johannes Maximilian Kühn, Daniel Mueller-Gritschneder, Sani R. Nassif, Holm Rauchfuss, Wolfgang Rosenstiel, Ulf Schlichtmann, Muhammad Shafique, Mehdi Baradaran Tahoori, Jürgen Teich, Norbert Wehn, Christian Weis, Hans-Joachim Wunderlich:
  Resilience Articulation Point (RAP): Cross-layer dependability modeling for nanometer system-on-chip resilience. 1066-1074
• 
  Dominik Lorenz, Martin Barke, Ulf Schlichtmann:
  Monitoring of aging in integrated circuits by identifying possible critical paths. 1075-1082
• 
  Veit B. Kleeberger, Martin Barke, Christoph Werner, Doris Schmitt-Landsiedel, Ulf Schlichtmann:
  A compact model for NBTI degradation and recovery under use-profile variations and its application to aging analysis of digital integrated circuits. 1083-1089
• 
  Jason Woo, Po-Yen Chien, Frank Yang, Seung Chul Song, P. R. Chidi Chidambaram, Joseph Wang, Geoffrey Yeap:
  Improved device variability in scaled MOSFETs with deeply retrograde channel profile. 1090-1095
• 
  Hongtao Zhou, Xing Zhou, Francis Benistant:
  Analytical compact modeling and statistical variability study of LDMOS. 1096-1102
• 
  Xiangchen Chen, Cher Ming Tan:
  Modeling and analysis of gate-all-around silicon nanowire FET. 1103-1108
• 
  Zehua Chen, Hei Wong, Yan Han, Shurong Dong, B. L. Yang:
  Temperature dependences of threshold voltage and drain-induced barrier lowering in 60 nm gate length MOS transistors. 1109-1114
• 
  Wing-Shan Tam, Chi-Wah Kok, Sik-Lam Siu, Wing-Man Tang, Chi-Wah Leung, Hei Wong:
  Thermal stability of sectorial split-drain magnetic field-effect transistors. 1115-1118
• 
  Tsung-Ju Chen, Chin-Lung Kuo:
  Oxygen vacancy formation and the induced defect states in HfO₂ and Hf-silicates - A first principles hybrid functional study. 1119-1124
• 
  Arka Dutta, Kalyan Koley, Chandan Kumar Sarkar:
  Analysis of Harmonic distortion in asymmetric underlap DG-MOSFET with high-k spacer. 1125-1132
• 
  Xuan Feng, Hei Wong, B. L. Yang, Shurong Dong, Hiroshi Iwai, Kuniyuki Kakushima:
  On the current conduction mechanisms of CeO₂/La₂O₃ stacked gate dielectric. 1133-1136
• 
  Sudhansu Kumar Pati, Kalyan Koley, Arka Dutta, N. Mohankumar, Chandan Kumar Sarkar:
  Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs. 1137-1142
• 
  Matteo Meneghini, Simone Vaccari, Matteo Dal Lago, Stefano Marconi, Marco Barbato, Nicola Trivellin, Alessio Griffoni, Alberto Alfier, Giovanni Verzellesi, Gaudenzio Meneghesso, Enrico Zanoni:
  ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements. 1143-1149
• 
  Song Lan, Cher Ming Tan, Kevin Wu:
  Methodology of reliability enhancement for high power LED driver. 1150-1159
• 
  Shurong Dong, Lei Zhong, Jie Zeng, Hongwei Li, Jun Wang, Jianfeng Zheng, Yan Han:
  Stacked zener trigger SCR for HV IC ESD protection. 1160-1162
• 
  Wing-Shan Tam, Chi-Wah Kok, Sik-Lam Siu, Hei Wong:
  Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology. 1163-1168
• 
  Hailian Liang, Weidong Nie, Xiaofeng Gu, Shurong Dong, W. S. Lau:
  An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits. 1169-1172
• 
  Jie Zeng, Shurong Dong, Lei Zhong, Guo Wei, Yan Han, Weicheng Liu, Hongwei Li, Jun Wang:
  An area-efficient LDMOS-SCR ESD protection device for the I/O of power IC application. 1173-1178
• 
  Artur Wymyslowski:
  Guest Editorial: 2013 EuroSimE International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems. 1179-1181
• 
  Ehsan Parsa, Hao Huang, Abhijit Dasgupta:
  Multi-physics simulations for combined temperature/humidity loading of potted electronic assemblies. 1182-1191
• 
  M. Bagherinia, Matteo Bruggi, Alberto Corigliano, Stefano Mariani, Ernesto Lasalandra:
  Geometry optimization of a Lorentz force, resonating MEMS magnetometer. 1192-1199
• 
  Bart Vandevelde, Andrej Ivankovic, B. Debecker, Melina Lofrano, Kris Vanstreels, Wei Guo, Vladimir Cherman, Marcel Gonzalez, Geert Van der Plas, Ingrid De Wolf, Eric Beyne, Zsolt Tokei:
  Chip-Package Interaction in 3D stacked IC packages using Finite Element Modelling. 1200-1205
• 
  Kirsten Weide-Zaage, J. Schlobohm, R. T. H. Rongen, F. C. Voogt, R. Roucou:
  Simulation and measurement of the flip chip solder bumps with a Cu-plated plastic core. 1206-1211
• 
  S. Tarashioon, W. D. van Driel, G. Q. Zhang:
  Multi-physics reliability simulation for solid state lighting drivers. 1212-1222
• 
  Jürgen Auersperg, Rainer Dudek, R. Jordan, O. Bochow-Neß, Sven Rzepka, Bernd Michel:
  On the crack and delamination risk optimization of a Si-interposer for LED packaging. 1223-1227
• 
  Jue Li, Mikael Broas, Jani Raami, Toni T. Mattila, Mervi Paulasto-Kröckel:
  Reliability assessment of a MEMS microphone under mixed flowing gas environment and shock impact loading. 1228-1234
• 
  Jürgen Eckermann, Shahid Mehmood, Helen Davies, Nick P. Lavery, Stephen G. R. Brown, Johann Sienz, A. Jones, P. Sommerfeld:
  Computational modeling of creep-based fatigue as a means of selecting lead-free solder alloys. 1235-1242
• 
  Florian Schindler-Saefkow, Florian Rost, Alexander Otto, R. Pantou, Raul Mroßko, Bernhard Wunderle, Bernd Michel, Sven Rzepka, Jürgen Keller:
  Stress impact of moisture diffusion measured with the stress chip. 1243-1252

Review Paper

• 
  Hiren R. Kotadia, Philip D. Howes, Samjid H. Mannan:
  A review: On the development of low melting temperature Pb-free solders. 1253-1273

Research Articles

• 
  Cong Li, Yiqi Zhuang, Ru Han, Gang Jin:
  Subthreshold behavior models for short-channel junctionless tri-material cylindrical surrounding-gate MOSFET. 1274-1281
• 
  Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, Feng-Tso Chien:
  Device characteristics of AlGaN/GaN MIS-HEMTs with high-k Hf_xZr_1-xO₂ (x = 0.66, 0.47, 0.15) insulator layer. 1282-1287
• 
  Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit:
  New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. 1288-1292
• 
  Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao:
  Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. 1293-1298
• 
  Vahid Hamiyati Vaghef, Ali Peiravi:
  A graph based approach for reliability analysis of nano-scale VLSI logic circuits. 1299-1306
• 
  Fu-Kwun Wang, Yi-Chen Lu:
  Useful lifetime analysis for high-power white LEDs. 1307-1315
• 
  Reiner W. Kuehl:
  Influence of bias humidity testing and application on time-dependent, Arrhenius-law-based stability predictions for thin film resistors. 1316-1327
• 
  Yong-Kang Tao, Yunfeng Liu, Jing-Xin Dong:
  Flexible stop and double-cascaded stop to improve shock reliability of MEMS accelerometer. 1328-1337
• 
  Huaiyu Ye, Jia Wei, Henk W. van Zeijl, Pasqualina M. Sarro, Guoqi Zhang:
  Fabrication and application of temperature triggered MEMS switch for active cooling control in Solid State Lighting system. 1338-1343
• 
  Jung-Chang Wang:
  U- and L-shaped heat pipes heat sinks for cooling electronic components employed a least square smoothing method. 1344-1354
• 
  Huaiyu Ye, Robert Sokolovskij, Henk W. van Zeijl, Alexander W. J. Gielen, Guoqi Zhang:
  A polymer based miniature loop heat pipe with silicon substrate and temperature sensors for high brightness light-emitting diodes. 1355-1362
• 
  Z.-H. Jin:
  Thermal stresses in a multilayered thin film thermoelectric structure. 1363-1368
• 
  Chao-Ton Su, Hung-Chun Lin, Po-Wen Teng, Taho Yang:
  Improving the reliability of electronic paper display using FMEA and Taguchi methods: A case study. 1369-1377
• 
  Feng-Chih Hsu, Ya-Chi Cheng, Yu-Ting Wang, Ming-Tzer Lin, Chih-Ming Chen:
  Planar copper-tin inter-metallic film formation on strained substrates. 1378-1383
• 
  Yingtao Ding, Yangyang Yan, Qianwen Chen, Shiwei Wang, Rui Su, Hua Dang:
  Analytical solution on interfacial reliability of 3-D through-silicon-via (TSV) containing dielectric liner. 1384-1391
• 
  Emmanuelle S. Freitas, Wislei R. Osório, José E. Spinelli, Amauri Garcia:
  Mechanical and corrosion resistances of a Sn-0.7 wt.%Cu lead-free solder alloy. 1392-1400
• 
  M. S. Park, S. L. Gibbons, Raymundo Arróyave:
  Prediction of processing maps for transient liquid phase diffusion bonding of Cu/Sn/Cu joints in microelectronics packaging. 1401-1411
• 
  Siavash Rezaei, Seyed Ghassem Miremadi, Hossein Asadi, Mahdi Fazeli:
  Soft error estimation and mitigation of digital circuits by characterizing input patterns of logic gates. 1412-1420
• 
  Palkesh Jain, Bapana Pudi, Meghna Sreenivasan:
  Design-in-reliability: From library modeling and optimization to gate-level verification. 1421-1432
• 
  Takuya Naoe, Taketoshi Mizobe, Kohichi Yokoyama:
  Case studies of defect localization based on software-based fault diagnosis in comparison with PEMS/OBIRCH analysis. 1433-1442
• 
  Muhammad Ali Akbar, Jeong-A Lee:
  Self-repairing adder using fault localization. 1443-1451

Research Note

• 
  Aino Tietäväinen, Timo Rauhala, Henri Seppänen, Risto Kurppa, Antti I. Meriläinen, Edward Hæggström:
  Predicting bond failure after 1.5 ms of bonding, an initial study. 1452-1454

Volume 54, Number 8, August 2014

Research Articles

• 
  Jean-Luc Autran, Daniela Munteanu, Philippe Roche, Gilles Gasiot:
  Real-time soft-error rate measurements: A review. 1455-1476
• 
  Dhanoop Varghese, V. Reddy, S. Krishnan, Muhammad Ashraful Alam:
  OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review. 1477-1488
• 
  Dimitris P. Ioannou:
  HKMG CMOS technology qualification: The PBTI reliability challenge. 1489-1499
• 
  Javier Martín-Martínez, Carmen G. Almudéver, Albert Crespo-Yepes, Rosana Rodríguez, Montserrat Nafría, Antonio Rubio:
  A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture. 1500-1510
• 
  C. Y. Khor, Mohd Zulkifly Abdullah, Chun-Sean Lau, I. A. Azid:
  Recent fluid-structure interaction modeling challenges in IC encapsulation - A review. 1511-1526
• 
  Abhijit Biswas, Swagata Bhattacherjee:
  Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate. 1527-1533
• 
  Shaker Farid Sufian, Z. M. Fairuz, Mohammed Zubair, Mohd Zulkifly Abdullah, Julie Juliewatty Mohamed:
  Thermal analysis of dual piezoelectric fans for cooling multi-LED packages. 1534-1543
• 
  M. Yazdan Mehr, Willem D. van Driel, G. Q. Zhang:
  Accelerated life time testing and optical degradation of remote phosphor plates. 1544-1548
• 
  Sanjit Kumar Swain, Sarosij Adak, Sudhansu Kumar Pati, Hemant Pardeshi, Chandan Kumar Sarkar:
  Analysis of flicker and thermal noise in p-channel Underlap DG FinFET. 1549-1554
• 
  Namsu Kim, Changwoon Han:
  Thermal analysis and design of a 75-W hybrid-type DC-DC converter for space applications. 1555-1561
• 
  Nochang Park, Jae-Seong Jeong, Changwoon Han:
  Estimation of the degradation rate of multi-crystalline silicon photovoltaic module under thermal cycling stress. 1562-1566
• 
  HungYang Leong, Yap Boon Kar, Navas Khan, Mohd Rusli Ibrahim, L. C. Tan:
  Insulated Cu wire free air ball characterization. 1567-1574
• 
  Xiaowu Hu, Yulong Li, Yong Liu, Yi Liu, Zhixian Min:
  Microstructure and shear strength of Sn37Pb/Cu solder joints subjected to isothermal aging. 1575-1582
• 
  Jianxin Wang, Hiroshi Nishikawa:
  Impact strength of Sn-3.0Ag-0.5Cu solder bumps during isothermal aging. 1583-1591
• 
  R. Mahmudi, D. Farasheh:
  Microstructure and elevated-temperature shear strength of Zn-4Al-3Mg-xSn high-temperature lead-free solders. 1592-1597
• 
  Junsung Ma, Sungdong Kim, Sarah Eunkyung Kim:
  Characterization of flip chip bonded structure with Cu ABL power bumps. 1598-1602
• 
  Hong Gao, Dong Zhang, Li-Lan Gao, Jian-hua Ma:
  The coupling effects of temperature, electric current and stress on the adhesion and electrical properties of COG assembly. 1603-1612
• 
  Vladimir Petrovic, Günter Schoof, Zoran Stamenkovic:
  Fault-tolerant TMR and DMR circuits with latchup protection switches. 1613-1626
• 
  Aiwu Ruan, Bairui Jie, Li Wan, Junhao Yang, Chuanyin Xiang, Zujian Zhu, Yu Wang:
  A bitstream readback-based automatic functional test and diagnosis method for Xilinx FPGAs. 1627-1635

Volume 54, Numbers 9-10, September - October 2014

SI: ESREF 2014
Editorial

• 
  Christian Boit:
  Editorial. 1637

Reliability & Failure Mechanisms of Organic Devices

• 
  Nicola Wrachien, Andrea Cester, Nicolò Lago, Gaudenzio Meneghesso, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini:
  Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states. 1638-1642
• 
  Indranil Bose, Kornelius Tetzner, Kathrin Borner, Karlheinz Bock:
  Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags. 1643-1647

Quality and Reliability Assessment - Techniques and Methods for Devices and Systems

• 
  Werner Kanert:
  Robustness Validation - A physics of failure based approach to qualification. 1648-1654
• 
  Nicolae Cristian Sintamarean, Huai Wang, Frede Blaabjerg, Peter de Place Rimmen:
  A design tool to study the impact of mission-profile on the reliability of SiC-based PV-inverter devices. 1655-1660
• 
  Amar Mavinkurve, Leon Goumans, G. M. O'Halloran, Rene T. H. Rongen, Mark-Luke Farrugia:
  Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests. 1661-1665
• 
  Wee Loon Ng, Kheng Chok Tee, Junfeng Liu, Yong Chiang Ee, Oliver Aubel, Chuan Seng Tan, Kin Leong Pey:
  Robust Electromigration reliability through engineering optimization. 1666-1670
• 
  Oliver Aubel, Armand Beyer, Georg Talut, Martin Gall:
  Empirical BEOL-TDDB evaluation based on I(t)-trace analysis. 1671-1674
• 
  Baojun Tang, Kris Croes, Yohan Barbarin, Yunqi Wang, Robin Degraeve, Yunlong Li, Maria Toledano-Luque, Thomas Kauerauf, Jürgen Bömmels, Zsolt Tökei, Ingrid De Wolf:
  As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability. 1675-1679
• 
  David Squiller, Hannes Greve, Elena Mengotti, F. Patrick McCluskey:
  Physics-of-failure assessment methodology for power electronic systems. 1680-1685
• 
  Matthias Steiert, Jürgen Wilde:
  Influence of dicing damages on the thermo-mechanical reliability of bare-chip assemblies. 1686-1691
• 
  Giulio Marti, Lucile Arnaud, Yves Wouters:
  Study of EM void nucleation and mechanic relaxation effects. 1692-1696
• 
  Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt:
  Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. 1697-1701
• 
  Boukary Ouattara, Lise Doyen, David Ney, Habib Mehrez, Pirouz Bazargan-Sabet:
  Power grid redundant path contribution in system on chip (SoC) robustness against electromigration. 1702-1706
• 
  Juli Blasco, Helena Castán, Héctor García, Salvador Dueñas, Jordi Suñé, Marianna Kemell, Kaupo Kukli, Mikko Ritala, Markku Leskelä, Enrique Miranda:
  Single-parameter model for the post-breakdown conduction characteristics of HoTiO_x-based MIM capacitors. 1707-1711
• 
  Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey:
  Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO₂ on reliability of SiO_x interfacial layer. 1712-1717
• 
  Thomas Santini, Sébastien Morand, Mitra Fouladirad, Luong-Viêt Phung, Florent Miller, Bruno Foucher, Antoine Grall, Bruno Allard:
  Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment. 1718-1723
• 
  Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein, Christian Kovács:
  Degradation behavior in upstream/downstream via test structures. 1724-1728
• 
  Nagarajan Raghavan, Daniel D. Frey, Kin Leong Pey:
  Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory. 1729-1734
• 
  M. Fuegl, G. Mackh, Elke Meissner, Lothar Frey:
  Analytical stress characterization after different chip separation methods. 1735-1740
• 
  Andreas Rückerl, Sophia Huppmann, Roland Zeisel, Simeon Katz:
  Monolithic integrable capacitive humidity sensing method for material characterization of dielectric thin films. 1741-1744
• 
  Aleksandr S. Petrov, Konstantin I. Tapero, Viktor N. Ulimov:
  Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing. 1745-1748
• 
  Louis Gerrer, Salvatore M. Amoroso, Razaidi Hussin, Asen Asenov:
  RTN distribution comparison for bulk, FDSOI and FinFETs devices. 1749-1752
• 
  Ning Duan, T. Bach, J. Shen, R. Rongen:
  Comparison of in-situ measurement techniques of solder joint reliability under thermo-mechanical stresses. 1753-1757
• 
  Michael Elßner:
  Vacuum quality evaluation for uncooled micro bolometer thermal imager sensors. 1758-1763
• 
  Julien Magnien, Golta Khatibi:
  Assessment of mechanical reliability of surface mounted capacitor by an accelerated shear fatigue test technique. 1764-1769
• 
  Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir:
  μ-Raman spectroscopy for stress analysis in high power silicon devices. 1770-1773
• 
  You Wang, Yue Zhang, Erya Deng, Jacques-Olivier Klein, Lirida A. B. Naviner, Weisheng Zhao:
  Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses. 1774-1778

Focused Ion Beam and European FIB User Group

• 
  Huimeng Wu, David Ferranti, Lewis Stern:
  Precise nanofabrication with multiple ion beams for advanced circuit edit. 1779-1784
• 
  Michél Simon-Najasek, Susanne Hübner, Frank Altmann, Andreas Graff:
  Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures. 1785-1789
• 
  Christian Lang, Matthew Hiscock, Michael Dawson, Cheryl Hartfield:
  Local thickness and composition analysis of TEM lamellae in the FIB. 1790-1793
• 
  Philipp Scholz, Norbert Herfurth, Michael Sadowski, Ted R. Lundquist, Uwe Kerst, Christian Boit:
  Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials - An adaptive calibration algorithm. 1794-1797
• 
  Clemens Helfmeier, Rudolf Schlangen, Christian Boit:
  Focused ion beam contact to non-volatile memory cells. 1798-1801
• 
  Lionel Dantas de Morais, Sophie Chevalliez, Stephanie Mouleres:
  Low temperature FIB cross section: Application to indium micro bumps. 1802-1805

Reliability & Failure Mechanisms in Power Devices

• 
  Markus Thoben, F. Sauerland, K. Mainka, S. Edenharter, L. Beaurenaut:
  Lifetime modeling and simulation of power modules for hybrid electrical/electrical vehicles. 1806-1812
• 
  Ronan German, Ali Sari, Pascal Venet, Mohamed Ayadi, Olivier Briat, Jean-Michel Vinassa:
  Prediction of supercapacitors floating ageing with surface electrode interface based ageing law. 1813-1817
• 
  F. Patrick McCluskey, N. M. Li, Elena Mengotti:
  Eliminating infant mortality in metallized film capacitors by defect detection. 1818-1822
• 
  Maawad Makdessi, Ali Sari, Pascal Venet:
  Metallized polymer film capacitors ageing law based on capacitance degradation. 1823-1827
• 
  Michele Riccio, Luca Maresca, Andrea Irace, Giovanni Breglio, Yohei Iwahashi:
  Impact of gate drive voltage on avalanche robustness of trench IGBTs. 1828-1832
• 
  Giuseppe De Falco, Michele Riccio, Giovanni Breglio, Andrea Irace:
  Thermal-aware design and fault analysis of a DC/DC parallel resonant converter. 1833-1838
• 
  Xavier Perpiñà, Xavier Jordà, Javier Leon, Miquel Vellvehí, Daniel Antón, Sergio Llorente:
  Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications. 1839-1844
• 
  Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy:
  3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions. 1845-1850
• 
  Mohamed Ali Belaïd, M. Gares, K. Daoud, Olivier Latry:
  Performance drifts of N-MOSFETs under pulsed RF life test. 1851-1855
• 
  Franc Dugal, Mauro Ciappa:
  Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules. 1856-1861
• 
  Saskia Huber, Marius van Dijk, Hans Walter, Olaf Wittler, Tina Thomas, Klaus-Dieter Lang:
  Improving the FE simulation of molded packages using warpage measurements. 1862-1866
• 
  Toshitaka Ishizaki, A. Kuno, A. Tane, Masashi Yanase, F. Osawa, T. Satoh, Yasushi Yamada:
  Reliability of Cu nanoparticle joint for high temperature power electronics. 1867-1871
• 
  Richard Randoll, Wolfgang Wondrak, Andreas Schletz:
  Dielectric strength and thermal performance of PCB-embedded power electronics. 1872-1876
• 
  David Gross, Sabine Haag, Martin Schneider-Ramelow, Klaus-Dieter Lang:
  The influence of liners with Ti, Ta or Ru finish on thin Cu films. 1877-1882
• 
  C. Olk, Stefano Aresu, R. Rudolf, M. Röhner, Wolfgang Gustin, E. Stein Von Kamienski:
  HCS degradation of 5 nm oxide high-voltage PLDMOS. 1883-1886
• 
  Corinne Bergès, Pierre Soufflet, Abdeslam Jadrani:
  Risk and reliability assessment about a manufacturing issue in a power MOSFET for automotive applications. 1887-1890
• 
  Junpei Takaishi, Syohei Harada, Masanori Tsukuda, Ichiro Omura:
  Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II. 1891-1896
• 
  Kazunori Hasegawa, Kenichi Yamamoto, Hidetaro Yoshida, Kota Hamada, Masanori Tsukuda, Ichiro Omura:
  Short-circuit protection for an IGBT with detecting the gate voltage and gate charge. 1897-1900
• 
  Peter Dietrich:
  Joining and package technology for 175 °C Tj increasing reliability in automotive applications. 1901-1905
• 
  Ihsan Supono, Jesús Urresti, Alberto Castellazzi, David Flores:
  Overload robust IGBT design for SSCB application. 1906-1910
• 
  Yangang Wang, Steve Jones, Andy Dai, Guoyou Liu:
  Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles. 1911-1915
• 
  Francesco Giuliani, De Dipankar, Nicola Delmonte, Alberto Castellazzi, Paolo Cova:
  Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design. 1916-1920
• 
  Son-Ha Tran, Laurent Dupont, Zoubir Khatir:
  Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions. 1921-1926
• 
  Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory:
  Turn-off instabilities in large area IGBTs. 1927-1934
• 
  Markus Andresen, Marco Liserre:
  Impact of active thermal management on power electronics design. 1935-1939
• 
  Yandong He, Ganggang Zhang, Xing Zhang:
  NBTI degradation in STI-based LDMOSFETs. 1940-1943
• 
  Mohamed Ayadi, Olivier Briat, Richard Lallemand, Akram Eddahech, Ronan German, Gerard Coquery, Jean-Michel Vinassa:
  Description of supercapacitor performance degradation rate during thermal cycling under constant voltage ageing test. 1944-1948

Chip-Package Interactions and 3D Reliability & Failure Mechanisms

• 
  Yunlong Li, Stefaan Van Huylenbroeck, Els Van Besien, Xiaoping Shi, Chen Wu, Michele Stucchi, Gerald Beyer, Eric Beyne, Ingrid De Wolf, Kristof Croes:
  Reliability challenges for barrier/liner system in high aspect ratio through silicon vias. 1949-1952
• 
  Lado Filipovic, Siegfried Selberherr:
  The effects of etching and deposition on the performance and stress evolution of open through silicon vias. 1953-1958
• 
  Christoph Sander, Yvonne Standke, Sven Niese, Rüdiger Rosenkranz, André Clausner, Martin Gall, Ehrenfried Zschech:
  Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration. 1959-1962
• 
  Dietmar Vogel, Ellen Auerswald, Jürgen Auersperg, Parisa Bayat, Raul D. Rodriguez, Dietrich R. T. Zahn, Sven Rzepka, Bernd Michel:
  Stress analyses of high spatial resolution on TSV and BEoL structures. 1963-1968
• 
  Jörg Dreybrodt, Yves Dupraz:
  Study of the UBM to copper interface robustness of solder bumps in flip chip packages. 1969-1971
• 
  Abderrahim El Amrani, Abdellah Benali, Mohsine Bouya, Mustapha Faqir, K. Demir, Abdelkader Hadjoudja, Mounir Ghogho:
  A study of through package vias in a glass interposer for multifunctional and miniaturized systems. 1972-1976
• 
  Verena Hein, Jörg Kludt, Kirsten Weide-Zaage:
  Evaluation new corner stress relief structure layout for high robust metallization. 1977-1981
• 
  George Vakanas, Björn Vandecasteele, David Schaubroeck, Joke De Messemaeker, Geert Willems, Mark Ashworth, Geoffrey D. Wilcox, Ingrid De Wolf:
  Sn whisker evaluations in 3D microbumped structures. 1982-1987

Reliability & Failure Mechanisms in Packages and Assembly

• 
  R. T. H. Rongen, R. Roucou, P. J. vd Wel, F. C. Voogt, F. Swartjes, Kirsten Weide-Zaage:
  Reliability of Wafer Level Chip Scale Packages. 1988-1994
• 
  Jörg C. Krinke, Dragica Dragicevic, Susann Leinert, Erik Frieß, Joachim Glück:
  High temperature degradation of palladium coated copper bond wires. 1995-1999
• 
  Benjamin März, Andreas Graff, Robert Klengel, Matthias Petzold:
  Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials. 2000-2005
• 
  Elaheh Arjmand, Pearl A. Agyakwa, C. Mark Johnson:
  Reliability of thick Al wire: A study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods. 2006-2012
• 
  Hélène Frémont, Jörg Kludt, Massar Wade, Kirsten Weide-Zaage, Isabelle Bord-Majek, Geneviève Duchamp:
  Qualification procedure for moisture in embedded capacitors. 2013-2016
• 
  Sanna Lahokallio, Janne Kiilunen, Laura Frisk:
  High temperature reliability of electrically conductive adhesive attached temperature sensors on flexible polyimide substrates. 2017-2022
• 
  Harald Preu, Jochen Feilmeier, Markus Lang, Norbert Soellner, Jürgen Walter, Walter Mack:
  A study on electrochemical effects in external capacitor packages. 2023-2027
• 
  Yang Liu, Stanley Y. Y. Leung, Jia Zhao, Cell K. Y. Wong, Cadmus A. Yuan, Guoqi Zhang, Fenglian Sun, Liangliang Luo:
  Thermal and mechanical effects of voids within flip chip soldering in LED packages. 2028-2033
• 
  Yik Yee Tan, Claudia Keller, Kok Seng Teo, Sivanyanam Rajamanickam:
  Influence of mobile ion in organic material used in semiconductor devices. 2034-2038
• 
  Aldo Ghisi, Stefano Mariani, Alberto Corigliano, Giorgio Allegato, Laura Oggioni:
  A three-scale approach to the numerical simulation of metallic bonding for MEMS packaging. 2039-2043
• 
  Nor Ilyana Muhd Nordin, Suhana Mohd Said, Roziana Ramli, Mohd Faizul Mohd Sabri, N. M. Sharif, N. A. F. N. M. Arifin, N. N. S. Ibrahim:
  Microstructure of Sn-1Ag-0.5Cu solder alloy bearing Fe under salt spray test. 2044-2047
• 
  Juha Pippola, Tuomas Marttila, Laura Frisk:
  Protective coatings of electronics under harsh thermal shock. 2048-2052
• 
  Yang Liu, Fenglian Sun, Hongwu Zhang, J. Wang, Zhen Zhou:
  Evaluating board level solder interconnects reliability using vibration test methods. 2053-2057
• 
  Laura Frisk, Kirsi Saarinen-Pulli:
  Reliability of adhesive joined thinned chips on flexible substrates under humid conditions. 2058-2063

Failure Analysis

• 
  Yann Weber, Linda Buffo, Béatrice Vanhuffel, Nicholas Lee, Neal Stirlen, Jeff Chen, Xiang-Dong Wang:
  Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect. 2064-2069
• 
  Thomas Schweinböck, Sören Hommel:
  Quantitative Scanning Microwave Microscopy: A calibration flow. 2070-2074
• 
  Antoine Reverdy, M. Marchetti, Allesandra Fudoli, Alberto Pagani, V. Goubier, M. Cason, Jesse Alton, Martin Igarashi, G. Gibbons:
  Electro Optical Terahertz Pulse Reflectometry, a non destructive technique to localize defects on various type of package. 2075-2080
• 
  Mauro Ciappa, Alexey Yu. Illarionov, Emre Ilgünsatiroglu:
  Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fields. 2081-2087
• 
  Mohamed Mehdi Rebaï, Frédéric Darracq, Jean-Paul Guillet, Elise Bernou, Kevin Sanchez, Philippe Perdu, Dean Lewis:
  A comprehensive study of the application of the EOP techniques on bipolar devices. 2088-2092
• 
  Jan Gaudestad, Antonio Orozco:
  Magnetic Field Imaging for non destructive 3D IC testing. 2093-2098
• 
  Samuel Chef, Bastien Billiot, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak:
  Pattern image enhancement by extended depth of field. 2099-2104
• 
  Arkadiusz Glowacki, Christian Boit, Philippe Perdu, Yoshitaka Iwaki:
  Backside spectroscopic photon emission microscopy using intensified silicon CCD. 2105-2108
• 
  Elena Mengotti, Liliana I. Duarte, Juha Pippola, Laura Frisk:
  Fretting corrosion: Analysis of the failure mechanism for low voltage drives applications. 2109-2114
• 
  Erik Paul, Holger Herzog, Sören Jansen, Christian Hobert, Eckhard Langer:
  SEM-based nanoprobing on 32 and 28 nm CMOS devices challenges for semiconductor failure analysis. 2115-2117
• 
  Georg Michael Reuther, Reinhard Pufall, Michael Goroll:
  Acoustic detection of micro-cracks in small electronic devices. 2118-2122
• 
  Mauro Ciappa, Emre Ilgünsatiroglu, Alexey Yu. Illarionov:
  Exploring the limits of scanning electron microscopy for the metrology of critical dimensions of photoresist structures in the nanometer range. 2123-2127
• 
  Stefan Doering, Ralf Rudolf, Martin Pinkert, Hagen Roetz, Catejan Wagner, Stefan Eckl, Marc Strasser, Andre Wachowiak, Thomas Mikolajick:
  Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage. 2128-2132
• 
  Wolfhard H. Zisser, Hajdin Ceric, Josef Weinbub, Siegfried Selberherr:
  Electromigration reliability of open TSV structures. 2133-2137

Reliability & Failure Mechanisms of Photonic and Special Devices

• 
  Matteo Dal Lago, Matteo Meneghini, Carlo De Santi, Marco Barbato, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni:
  ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms. 2138-2141
• 
  Heinz-Christoph Neitzert, Giovanni Landi:
  Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser. 2142-2146
• 
  Carlo De Santi, Matteo Meneghini, Michael Marioli, Matteo Buffolo, Nicola Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U. T. Schwarz, Gaudenzio Meneghesso, Enrico Zanoni:
  Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage. 2147-2150
• 
  Giovanna Mura, Massimo Vanzi, Giulia Marcello:
  FIB-induced electro-optical alterations in a DFB InP laser diode. 2151-2153
• 
  Francisco Jose Arques Orobon, Neftalí Núñez, Manuel Vázquez, Vicente González Posadas:
  UV LEDs reliability tests for fluoro-sensing sensor application. 2154-2158
• 
  Matroni Koutsoureli, Loukas Michalas, Anestis Gantis, George J. Papaioannou:
  A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches. 2159-2163
• 
  Jung Han Kang, Edward Namkyu Cho, Ilgu Yun:
  Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress. 2164-2166
• 
  Dae Hyun Kim, Jong Tae Park:
  The effect of gate overlap on the device degradation in IGZO thin film transistors. 2167-2170
• 
  Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria:
  Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications. 2171-2175
• 
  Wonwook Oh, Seongtak Kim, Soo Hyun Bae, Nochang Park, Yoonmook Kang, Hae-Seok Lee, Donghwan Kim:
  The degradation of multi-crystalline silicon solar cells after damp heat tests. 2176-2179
• 
  Peyman Rafiee, Golta Khatibi:
  A fast reliability assessment method for Si MEMS based microcantilever beams. 2180-2184

Reliability & Failure Mechanisms of Wide Bandgap Devices

• 
  Asad Fayyaz, Li Yang, Michele Riccio, Alberto Castellazzi, Andrea Irace:
  Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. 2185-2190
• 
  Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl:
  Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. 2191-2195
• 
  Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere:
  Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. 2196-2199
• 
  Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi:
  Thermal damage in SiC Schottky diodes induced by SE heavy ions. 2200-2206
• 
  Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà:
  Temperature effects on the ruggedness of SiC Schottky diodes under surge current. 2207-2212
• 
  Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
  Proton induced trapping effect on space compatible GaN HEMTs. 2213-2216
• 
  Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin:
  Analysis of an ESD failure mechanism on a SiC MESFET. 2217-2221
• 
  Alessandro Chini, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni:
  Traps localization and analysis in GaN HEMTs. 2222-2226
• 
  Takashi Katsuno, Takaaki Manaka, Tsuyoshi Ishikawa, Hiroyuki Ueda, Tsutomu Uesugi, Mitsumasa Iwamoto:
  Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generation. 2227-2231
• 
  Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere:
  Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. 2232-2236
• 
  Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
  Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. 2237-2241
• 
  Vineet Unni, Hiroji Kawai, E. M. Sankara Narayanan:
  Crosstalk in monolithic GaN-on-Silicon power electronic devices. 2242-2247
• 
  Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni:
  Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. 2248-2252

Reliability & Failure Mechanisms in Si-Technology and Nanoelectronics

• 
  Nagarajan Raghavan:
  Performance and reliability trade-offs for high-κ RRAM. 2253-2257
• 
  Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang, Jan Van Houdt:
  Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations. 2258-2261
• 
  Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier:
  Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. 2262-2265
• 
  Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey:
  Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices. 2266-2271
• 
  Bertrand Courivaud, Nicolas Nolhier, Gilles Ferru, Marise Bafleur, Fabrice Caignet:
  Reliability of ESD protection devices designed in a 3D technology. 2272-2277
• 
  Jean-Luc Autran, Maximilien Glorieux, Daniela Munteanu, Sylvain Clerc, Gilles Gasiot, Philippe Roche:
  Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits. 2278-2283
• 
  Daniela Munteanu, Jean-Luc Autran:
  Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation. 2284-2288
• 
  Jean-Max Dutertre, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, Giorgio Di Natale, Alexandre Sarafianos:
  Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS. 2289-2294
• 
  Nagarajan Raghavan, Michel Bosman, Kin Leong Pey:
  Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective. 2295-2299
• 
  Laurent Artola, Guillaume Hubert, Massimo Alioto:
  Comparative soft error evaluation of layout cells in FinFET technology. 2300-2305
• 
  Xinggong Wan, Sandhya Chandrashekhar, Boris Bayha, Martin Trentzsch, Torben Balzer, Mahesh Siddabathula, Oliver Aubel:
  A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node. 2306-2309
• 
  Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser:
  Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. 2310-2314
• 
  Jae Hoon Lee, Jong Tae Park:
  Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress. 2315-2318
• 
  Cristina Meinhardt, Alexandra L. Zimpeck, Ricardo A. L. Reis:
  Predictive evaluation of electrical characteristics of sub-22 nm FinFET technologies under device geometry variations. 2319-2324
• 
  Jin Hyung Choi, Jin-Woo Han, Chong-Gun Yu, Jong Tae Park:
  Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs. 2325-2328
• 
  Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken:
  Energy distribution of positive charges in high-k dielectric. 2329-2333
• 
  Yasmin Abdul Wahab, Norhayati Soin, Sharifah Wan Muhamad Hatta:
  Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS. 2334-2338
• 
  Kenneth Potter, Katrina A. Morgan, Chris Shaw, Peter Ashburn, William Redman-White, C. H. De Groot:
  Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide. 2339-2343
• 
  Fernanda Lima Kastensmidt, Jorge L. Tonfat, Thiago Hanna Both, Paolo Rech, Gilson I. Wirth, Ricardo Reis, Florent Bruguier, Pascal Benoit, Lionel Torres, Christopher Frost:
  Voltage scaling and aging effects on soft error rate in SRAM-based FPGAs. 2344-2348

Volume 54, Number 11, November 2014

• 
  Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys:
  Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. 2349-2354
• 
  Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis:
  Total-ionizing-dose effects and reliability of carbon nanotube FET devices. 2355-2359
• 
  V. S. Pershenkov, Miguel Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, S. Díez:
  Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses. 2360-2363
• 
  Vinicius V. A. Camargo, Ben Kaczer, Tibor Grasser, Gilson I. Wirth:
  Circuit simulation of workload-dependent RTN and BTI based on trap kinetics. 2364-2370
• 
  Pong-Fei Lu, Keith A. Jenkins, Tobias Webel, Oliver Marquardt, Birgit Schubert:
  Long-term NBTI degradation under real-use conditions in IBM microprocessors. 2371-2377
• 
  Miao Liao, Zhenghao Gan:
  New insight on negative bias temperature instability degradation with drain bias of 28 nm High-K Metal Gate p-MOSFET devices. 2378-2382
• 
  Cheolgyu Kim, Hyeokjin Kim, Bongkoo Kang:
  Voltage dependent degradation of HfSiON/SiO₂ nMOSFETs under positive bias temperature instability. 2383-2387
• 
  X. D. Huang, R. P. Shi, C. H. Leung, Pui-To Lai:
  Charge-trapping characteristics of BaTiO₃ with and without nitridation for nonvolatile memory applications. 2388-2391
• 
  Meng Chuan Lee, Hin Yong Wong, Lini Lee:
  Threshold voltage instability of nanoscale charge trapping non-volatile memory at steady phase. 2392-2395
• 
  L. X. Qian, P. T. Lai:
  A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases. 2396-2400
• 
  Xingwei Ding, Jianhua Zhang, Hao Zhang, He Ding, Chuanxin Huang, Jun Li, Weimin Shi, Xueyin Jiang, Zhilin Zhang:
  ZrO₂ insulator modified by a thin Al₂O₃ film to enhance the performance of InGaZnO thin-film transistor. 2401-2405
• 
  Weizong Xu, Lihua Fu, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, Ke Wei, Xinyu Liu:
  Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors. 2406-2409
• 
  K. T. Kaschani, Reinhold Gärtner:
  Electrical Overstress of Integrated Circuits. 2410-2416
• 
  Choon-W. Nahm:
  Aging characteristics of ZnO-PrO_1.83-based semiconducting varistors for surge protection reliability. 2417-2422
• 
  Vinoth K. Sundaramoorthy, E. Bianda, R. Bloch, Daniele Angelosante, Iulian Nistor, G. J. Riedel, F. Zurfluh, G. Knapp, A. Heinemann:
  A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off. 2423-2431
• 
  Donatien Martineau, Colette Levade, Marc Legros, Philippe Dupuy, Thomas Mazeaud:
  Universal mechanisms of Al metallization ageing in power MOSFET devices. 2432-2439
• 
  M. Yazdan Mehr, Willem D. van Driel, Sau Koh, Guoqi Zhang:
  Reliability and optical properties of LED lens plates under high temperature stress. 2440-2447
• 
  Huaiyu Ye, Bo Li, Hongyu Tang, Jia Zhao, Cadmus A. Yuan, Guoqi Zhang:
  Design of vertical fin arrays with heat pipes used for high-power light-emitting diodes. 2448-2455
• 
  Kim Trapani, Steve Martens, Krishna Challagulla, Salina Yong, Dean Millar, Sean Maloney:
  Water absorption characterisation, electrical reliability and mechanical testing of a submerged laminated a-Si thin film photovoltaic (PV) cells. 2456-2462
• 
  Kiyoshi Mizuuchi, Kanryu Inoue, Yasuyuki Agari, Masami Sugioka, Motohiro Tanaka, Takashi Takeuchi, Junichi Tani, Masakazu Kawahara, Yukio Makino, Mikio Ito:
  Bimodal and monomodal diamond particle effect on the thermal properties of diamond-particle-dispersed Al-matrix composite fabricated by SPS. 2463-2470
• 
  Chin-Li Kao, Tei-Chen Chen, Yi-Shao Lai, Ying-Ta Chiu:
  Investigation of electromigration reliability of redistribution lines in wafer-level chip-scale packages. 2471-2478
• 
  Wei Zhang, Junhui Li, Lei Han:
  Study of a dipping method for flip-chip flux coating. 2479-2486
• 
  Michael Fugger, Mathias Plappert, Carsten Schäffer, Oliver Humbel, Herbert Hutter, Herbert Danninger, Mathias Nowottnick:
  Comparison of WTi and WTi(N) as diffusion barriers for Al and Cu metallization on Si with respect to thermal stability and diffusion behavior of Ti. 2487-2493
• 
  Lei Qiang, Zaixing Huang:
  A physical model and analysis for whisker growth caused by chemical intermetallic reaction. 2494-2500
• 
  Stefano Mazzei, Mauro Madia, Stefano Beretta, Alberto Mancaleoni, Sebastiano Aparo:
  Analysis of Cu-wire pull and shear test failure modes under ageing cycles and finite element modelling of Si-crack propagation. 2501-2512
• 
  Jonathon P. Tucker, Dennis K. Chan, Ganesh Subbarayan, Carol A. Handwerker:
  Maximum entropy fracture model and its use for predicting cyclic hysteresis in Sn3.8Ag0.7Cu and Sn3.0Ag0.5 solder alloys. 2513-2522
• 
  Jonas Johansson, Ilja Belov, Erland Johnson, Rainer Dudek, Peter Leisner:
  Investigation on thermal fatigue of SnAgCu, Sn100C, and SnPbAg solder joints in varying temperature environments. 2523-2535
• 
  Karen M. C. Wong, Yee Kai Tian:
  Effect of trace platinum additions on the interfacial morphology of Sn-3.8Ag-0.7Cu alloy aged for long hours. 2536-2541
• 
  Francisco Molina-Lopez, R. E. de Araújo, M. Jarrier, Jérôme Courbat, Danick Briand, Nico F. de Rooij:
  Study of bending reliability and electrical properties of platinum lines on flexible polyimide substrates. 2542-2549
• 
  Rui Guo, Liming Gao, Dali Mao, Ming Li, Xu Wang, Zhong Lv, Hope Chiu:
  Study of free air ball formation in Ag-8Au-3Pd alloy wire bonding. 2550-2554
• 
  Adeline B. Y. Lim, Andrew C. K. Chang, Oranna Yauw, Bob Chylak, Chee Lip Gan, Zhong Chen:
  Ultra-fine pitch palladium-coated copper wire bonding: Effect of bonding parameters. 2555-2563
• 
  Hao-Wen Hsueh, Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen, Jun-Kai Chang:
  Microstructure, electric flame-off (EFO) characteristics and tensile properties of silver-lanthanum alloy wire. 2564-2569
• 
  Manoj Kumar Majumder, Pankaj Kumar Das, Brajesh Kumar Kaushik:
  Delay and crosstalk reliability issues in mixed MWCNT bundle interconnects. 2570-2577
• 
  Pierre Eckold, Rainer Niewa, Werner Hügel:
  Texture of electrodeposited tin layers and its influence on their corrosion behavior. 2578-2585
• 
  James Marro, Chukwudi Okoro, Yaw S. Obeng, Kathleen A. Richardson:
  Defect and microstructural evolution in thermally cycled Cu through-silicon vias. 2586-2593
• 
  Ephraim Suhir:
  Three-step concept (TSC) in modeling microelectronics reliability (MR): Boltzmann-Arrhenius-Zhurkov (BAZ) probabilistic physics-of-failure equation sandwiched between two statistical models. 2594-2603
• 
  Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi:
  Robust FinFET SRAM design based on dynamic back-gate voltage adjustment. 2604-2612
• 
  Bartomeu Alorda, Gabriel Torrens, Sebastià A. Bota, Jaume Segura:
  Adaptive static and dynamic noise margin improvement in minimum-sized 6T-SRAM cells. 2613-2620
• 
  Davide Sabena, Matteo Sonza Reorda, Luca Sterpone, Paolo Rech, Luigi Carro:
  Evaluating the radiation sensitivity of GPGPU caches: New algorithms and experimental results. 2621-2628
• 
  Jiajia Jiao, Yuzhuo Fu, Shi-Jie Wen:
  Accelerated assessment of fine-grain AVF in NoC using a Multi-Cell Upsets considered fault injection. 2629-2640

Short Communications

• 
  Damian Nowak, Andrzej Dziedzic:
  Fabrication and advanced electrical and stability characterization of laser-shaped thick-film and LTCC microresistors for high temperature applications. 2641-2644
• 
  Mustafa Demirci, Pedro Reviriego, Juan Antonio Maestro:
  Optimized parallel decoding of difference set codes for high speed memories. 2645-2648

Volume 54, Number 12, December 2014

• 
  Peter Ersland, Roberto Menozzi:
  Editorial. 2649
• 
  Huarui Sun, Miguel Montes Bajo, Michael J. Uren, Martin Kuball:
  Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation. 2650-2655
• 
  Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
  Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. 2656-2661
• 
  Hajime Sasaki, Kaoru Kadoiwa, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto, Toshiyuki Oishi, Kazuo Hayashi:
  Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation. 2662-2667
• 
  Yufei Wu, Chia-Yu Chen, Jesús A. del Alamo:
  Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress. 2668-2674
• 
  Donald A. Gajewski, Randall D. Lewis, Benjamin M. Decker:
  Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET. 2675-2681
• 
  Robert S. Howell, Randall Lewis, H. George Henry, Harold Hearne, Deas Brown, Dale Dawson, Andris Ezis:
  Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size. 2682-2687
• 
  Venkata Chivukula, Douglas Teeter, Preston Scott, Bhavin Shah, Ming Ji:
  Implications of thermal instability on HBT power amplifier reliability. 2688-2696
• 
  Ming-Hung Weng, Chao-Hung Chen, Che-Kai Lin, Shih-Hui Huang, Jhih-Han Du, Sheng-Wen Peng, Walter Wohlmuth, Frank Yung-Shi Chou, Chang-Hwang Hua:
  Investigation of high performance Edge Lifted Capacitors reliability for GaAs and GaN MMIC technology. 2697-2703

Review Paper

• 
  Ming Qiao, Xin Zhang, Shuai Wen, Bo Zhang, Zhaoji Li:
  A review of HVI technology. 2704-2716

Research Articles

• 
  Atanu Kundu, Kalyan Koley, Arka Dutta, Chandan Kumar Sarkar:
  Impact of gate metal work-function engineering for enhancement of subthreshold analog/RF performance of underlap dual material gate DG-FET. 2717-2722
• 
  P. Anandan, A. Nithya, N. Mohankumar:
  Simulation of flicker noise in gate-all-around Silicon Nanowire MOSFETs including interface traps. 2723-2727
• 
  Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu:
  Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion. 2728-2734
• 
  Yun Liu, Shanghong Zhao, Shengsheng Yang, Yongjun Li, Ruoxin Qiang:
  Markov process based reliability model for laser diodes in space radiation environment. 2735-2739
• 
  Shounak De, B. Satyanarayana, Ganesh Sanjeev, K. Ramakrishna, K. Mohan Rao, Manjunatha Pattabi:
  Effect of electron irradiation on morphological, compositional and electrical properties of nanocluster carbon thin films grown using room temperature based cathodic arc process for large area microelectronics. 2740-2746
• 
  Joel Molina Reyes, Rene Valderrama, Carlos Zuniga, Pedro Rosales, Wilfrido Calleja Arriaga, Alfonso Torres-Jácome, Francisco Javier de la Hidalga Wade, Edmundo A. Gutiérrez-D.:
  Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al₂O₃/Al and Al/Al₂O₃/W structures fabricated on glass at 300 °C. 2747-2753
• 
  Wun-Kai Wang, Hua-Chiang Wen, Chun-Hu Cheng, Ching-Hua Hung, Wu-Ching Chou, Wei-Hung Yau, Ping-Feng Yang, Yi-Shao Lai:
  Nanotribological properties of ALD-processed bilayer TiO₂/ZnO films. 2754-2759
• 
  Fábio Fedrizzi Vidor, Gilson I. Wirth, Ulrich Hilleringmann:
  Low temperature fabrication of a ZnO nanoparticle thin-film transistor suitable for flexible electronics. 2760-2765
• 
  Özge Tüzün Özmen:
  Effects of PCBM concentration on the electrical properties of the Au/P3HT: PCBM/n-Si (MPS) Schottky barrier diodes. 2766-2774
• 
  Weicheng Qiu, Xiang-Ai Cheng, Rui Wang, Zhongjie Xu, Chao Shen:
  The transient analysis of latch-up in CMOS transmission gate induced by laser. 2775-2781
• 
  Debo Wang, Quanyuan Feng, Xiaopei Chen, Tao Jin:
  Failure analysis and improvement of 60 V power UMOSFET. 2782-2787
• 
  Luowei Zhou, Junke Wu, Pengju Sun, Xiong Du:
  Junction temperature management of IGBT module in power electronic converters. 2788-2795
• 
  Emre Özkol, Samuel Hartmann, Gontran Pâques:
  Improving the power cycling performance of the emitter contact of IGBT modules: Implementation and evaluation of stitch bond layouts. 2796-2800
• 
  Brijesh Kumar, Brajesh Kumar Kaushik, Yuvraj Singh Negi:
  Design and analysis of noise margin, write ability and read stability of organic and hybrid 6-T SRAM cell. 2801-2812
• 
  Mohsen Radfar, Jack Singh:
  A yield improvement technique in severe process, voltage, and temperature variations and extreme voltage scaling. 2813-2823
• 
  Ling Xu, Yong Liu, Sheng Liu:
  Modeling and simulation of power electronic modules with microchannel coolers for thermo-mechanical performance. 2824-2835
• 
  Choon-W. Nahm:
  Aging characteristics of ZnO-V₂O₅-based varistors for surge protection reliability. 2836-2842
• 
  Halyna Klym, V. O. Balitska, O. I. Shpotyuk, Ivan Hadzaman:
  Degradation transformation in spinel-type functional thick-film ceramic materials. 2843-2848
• 
  Minho Choi, Ki Hyun Kim, Changhun Yun, Dai Hyoung Koo, Sang Bin Song, Jae Pil Kim:
  Direct correlation between reliability and pH changes of phosphors for white light-emitting diodes. 2849-2852
• 
  Sung-Uk Zhang, Bang Weon Lee:
  Fatigue life evaluation of wire bonds in LED packages using numerical analysis. 2853-2859
• 
  D. A. van den Ende, H. J. van de Wiel, Roel H. L. Kusters, Ashok Sridhar, J. F. M. Schram, Maarten Cauwe, Jeroen van den Brand:
  Mechanical and electrical properties of ultra-thin chips and flexible electronics assemblies during bending. 2860-2870
• 
  Min Yang, Min-Woo Chon, Joo-Hyun Kim, Seung-Hyun Lee, Jeongdai Jo, Junyeob Yeo, Seung Hwan Ko, Sung-Hoon Choa:
  Mechanical and environmental durability of roll-to-roll printed silver nanoparticle film using a rapid laser annealing process for flexible electronics. 2871-2880
• 
  Hsin-En Cheng, Rong-Sheng Chen:
  Interval optimal design of 3-D TSV stacked chips package reliability by using the genetic algorithm method. 2881-2897
• 
  Ming-Yi Tsai, P. S. Huang, C. Y. Huang, P. C. Lin, Lawrence Huang, Michael Chang, Steven Shih, J. P. Lin:
  An investigation into warpages, stresses and keep-out zone in 3D through-silicon-via DRAM packages. 2898-2904
• 
  Ahmed Sharif, Chee Lip Gan, Zhong Chen:
  Customized glass sealant for ceramic substrates for high temperature electronic application. 2905-2910
• 
  H. B. Qin, Wang-Yun Li, M. B. Zhou, X. P. Zhang:
  Low cycle fatigue performance of ball grid array structure Cu/Sn-3.0Ag-0.5Cu/Cu solder joints. 2911-2921
• 
  Yongxin Zhu, Xiaoyan Li, Ruiting Gao, Chao Wang:
  Low-cycle fatigue failure behavior and life evaluation of lead-free solder joint under high temperature. 2922-2928
• 
  Bismarck Luiz Silva, Amauri Garcia, José E. Spinelli:
  The roles of dendritic spacings and Ag₃Sn intermetallics on hardness of the SAC307 solder alloy. 2929-2934
• 
  Lei Han:
  High-speed video analysis for kink formation in a bond wire looping. 2935-2943
• 
  Byung-seung Yim, Jeong-Il Lee, Byung-Hun Lee, Young-Eui Shin, Jong-Min Kim:
  An investigation of the reliability of solderable ICA with low-melting-point alloy (LMPA) filler. 2944-2950
• 
  Joseph B. Bernstein, Moti Gabbay, Ofir Delly:
  Reliability matrix solution to multiple mechanism prediction. 2951-2955

Research Note

• 
  Hans de Vries, Ron Peerlings:
  Predicting conducting yarn failure in woven electronic textiles. 2956-2960