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Chaohui He
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2010 – 2019
- 2018
- [j10]Xiaozhi Du
, Dongyang Luo, Kailun Shi, Chaohui He, Shuhuan Liu:
FFI4SoC: a Fine-Grained Fault Injection Framework for Assessing Reliability against Soft Error in SoC. J. Electron. Test. 34(1): 15-25 (2018) - [j9]Xiaozhi Du
, Dongyang Luo, Chaohui He, Shuhuan Liu:
A Fine-Grained Software-Implemented DMA Fault Tolerance for SoC Against Soft Error. J. Electron. Test. 34(6): 717-733 (2018) - [j8]Jinxin Zhang, Qi Guo, Hongxia Guo, Wu Lu, Chaohui He, Xin Wang, Pei Li, Lin Wen:
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases. Microelectron. Reliab. 84: 105-111 (2018) - [j7]Wen Zhao
, Chaohui He, Wei Chen, Rongmei Chen
, Peitian Cong, Fengqi Zhang, Zujun Wang, Chen Shen, Lisang Zheng, Xiaoqiang Guo, Lili Ding:
Single-event multiple transients in guard-ring hardened inverter chains of different layout designs. Microelectron. Reliab. 87: 151-157 (2018) - 2017
- [j6]Jinxin Zhang, Hongxia Guo, Fengqi Zhang, Chaohui He, Pei Li, Yunyi Yan
, Hui Wang, Linxia Zhang:
Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. Sci. China Inf. Sci. 60(12): 120404:1-120404:3 (2017) - [j5]Xuecheng Du, Shuhuan Liu, Dongyang Luo, Yao Zhang, Xiaozhi Du, Chaohui He, Xiaotang Ren, Weitao Yang, Yuan Yuan:
Single event effects sensitivity of low energy proton in Xilinx Zynq-7010 system-on chip. Microelectron. Reliab. 71: 65-70 (2017) - 2016
- [j4]Du Tang, Ignacio Martin-Bragado, Chaohui He, Hang Zang, Cen Xiong, Yonghong Li, Daxi Guo, Peng Zhang, Jinxin Zhang:
Time dependent modeling of single particle displacement damage in silicon devices. Microelectron. Reliab. 60: 25-32 (2016) - 2015
- [j3]Cen Xiong, Shuhuan Liu, Yonghong Li, Du Tang, Jinxin Zhang, Xuecheng Du, Chaohui He:
Hot carrier effect on the bipolar transistors' response to electromagnetic interference. Microelectron. Reliab. 55(3-4): 514-519 (2015) - [j2]Jinxin Zhang, Chaohui He, Hongxia Guo, Du Tang, Cen Xiong, Pei Li, Xin Wang:
3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. Microelectron. Reliab. 55(8): 1180-1186 (2015) - [j1]Cen Xiong
, Yonghong Li, Shuhuan Liu, Du Tang, Jinxin Zhang, Chaohui He:
Hot carrier effect on a single SiGe HBT's EMI response. Microelectron. Reliab. 55(12): 2627-2633 (2015)
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