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ORCIDVladislav G. Mishustin
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2010 – 2019
- 2018
[c8]A. D. Maslov, A. V. Ermachikhin
, E. V. Bezuglaya, Vladislav G. Mishustin, Yuri V. Vorobyov, Valery V. Gudzev:
Spatial localization of dominating deep centers in multicrystalline silicon solar cells. MECO 2018: 1-4- [c7]A. D. Maslov, Vladislav G. Mishustin, A. V. Piryugin, Nikolay V. Vishnyakov:
Physical model to calculate current-voltage characteristics of double-junction solar cells based on a-Si: H and a-SiC: H. MECO 2018: 1-4 - 2017
- [c6]A. V. Ermachikhin, Tatyana A. Kholomina, Vladimir G. Litvinov, A. D. Maslov, Vladislav G. Mishustin, Sergey P. Vikhrov, Nikolay V. Vishnyakov:
Investigation of recombination processes in multicrystalline silicon solar cells. MECO 2017: 1-4 - [c5]D. S. Kusakin, Vladislav G. Mishustin, A. V. Piryugin, Sergey P. Vikhrov:
Simulation of electrophysical parameters of multilayer barrier homo- and heterostructures based on non-crystalline semiconductors. MECO 2017: 1-5 - [c4]A. D. Maslov, D. S. Loginov, Vladislav G. Mishustin, A. V. Piryugin, Nikolay V. Vishnyakov:
Simulation of current-voltage characteristics of multilayer solar cells based on crystalline and non-crystalline semiconductors. MECO 2017: 1-5 - 2016
- [c3]D. V. Almazov, Vladimir G. Litvinov, A. D. Maslov, Vladislav G. Mishustin, Sergey P. Vikhrov, Nikolay V. Vishnyakov:
Influence of the localized states on the collection efficiency of photogenerated charge carries in solar cells based on a-Si: H. MECO 2016: 47-50 - [c2]D. V. Almazov, A. D. Maslov, Tatyana A. Kholomina, Vladislav G. Mishustin, Nikolay V. Vishnyakov, O. I. Konkov:
Investigation of electric field distribution across the barrier silicon solar cells. MECO 2016: 51-54 - 2015
- [c1]Vladimir G. Litvinov, Nikolay V. Vishnyakov, Valery V. Gudzev, Vladislav G. Mishustin, Sergey M. Karabanov, Sergey P. Vikhrov, Andrey S. Karabanov:
Measuring complex for analysis of recombination deep traps in semiconductor solar cells. ICIT 2015: 1071-1074
Coauthor Index
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