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2020 – today
- 2024
[c13]Jianze Wang, Wei Zhang, Zhen Wu, Yimin Wang, Leming Jiao, Xiaolin Wang, Xiao Gong, Xuanyao Fong:
Transposable Memory Based on the Ferroelectric Field-Effect Transistor. ISCAS 2024: 1-5- 2023
- [c12]Zijie Zheng, Jiawei Xie
, Yiyuan Sun, Ying Xu, Xiaolin Wang, Leming Jiao, Zuopu Zhou, Qiwen Kong, Yue Chen, Xiao Gong:
First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory. ICICDT 2023: 29-33 - [c11]Leming Jiao, Kaizhen Han, Zuopu Zhou, Zijie Zheng, Xiaolin Wang, Qiwen Kong, Yuye Kang, Jishen Zhang, Long Liu, Xiao Gong:
First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices. VLSI Technology and Circuits 2023: 1-2 - [c10]Xiaolin Wang, Zijie Zheng, Qiwen Kong, Leming Jiao, Kaizhen Han, Chen Sun, Zuopu Zhou, Long Liu, Yuye Kang, Gan Liu, Dong Zhang, Xiao Gong:
First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving. VLSI Technology and Circuits 2023: 1-2 - [c9]Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong:
Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding. VLSI Technology and Circuits 2023: 1-2 - [c8]Zijie Zheng, Leming Jiao, Zuopu Zhou, Yuxuan Wang, Long Liu, Kaizhen Han, Chen Sun, Qiwen Kong, Dong Zhang, Xiaolin Wang, Kai Ni, Xiao Gong:
First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs. VLSI Technology and Circuits 2023: 1-2 - [c7]Zuopu Zhou, Leming Jiao, Qiwen Kong, Zijie Zheng, Kaizhen Han, Yue Chen, Chen Sun, Bich-Yen Nguyen, Xiao Gong:
Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration. VLSI Technology and Circuits 2023: 1-2 - [c6]Zuopu Zhou, Leming Jiao, Zijie Zheng, Xiaolin Wang, Dong Zhang, Kai Ni, Xiao Gong:
First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c5]Leming Jiao, Zuopu Zhou, Zijie Zheng, Yuye Kang, Chen Sun, Qiwen Kong, Xiaolin Wang, Dong Zhang, Gan Liu, Long Liu, Xiao Gong:
BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application. ICICDT 2022: 5-7 - [c4]Zuopu Zhou, Leming Jiao, Jiuren Zhou, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Xiao Gong:
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention. VLSI Technology and Circuits 2022: 357-358 - [c3]Zijie Zheng, Chen Sun, Leming Jiao, Dong Zhang, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni, Xiao Gong:
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection. VLSI Technology and Circuits 2022: 389-390 - [c2]Yue Chen, Gong Zhang, Jiuren Zhou, Zijie Zheng, Leming Jiao, Haibo Wang, Zuopu Zhou, Annie Kumar, Jishen Zhang, Yuxuan Wang, Qiwen Kong, Chen Sun, Xiao Gong:
First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit. VLSI Technology and Circuits 2022: 405-406 - [c1]Jishen Zhang, Haiwen Xu, Kian Hua Tan, Satrio Wicaksono, Qiwen Kong, Gong Zhang, Yue Chen, Chen Sun, Haibo Wang, Chao Wang, Zijie Zheng, Leming Jiao, Zuopu Zhou, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong:
First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform. VLSI Technology and Circuits 2022: 409-410
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