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S. E. Ang

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2007
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W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng:
Evidence that N₂O is a stronger oxidizing agent than O₂ for both Ta₂O₅ and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. Microelectron. Reliab. 47(2-3): 429-433 (2007)

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