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Jongwoo Park 0001
Person information
- affiliation: Samsung Display, Asan-si, Korea
Other persons with the same name
- Jongwoo Park (aka: Jong-Woo Park) — disambiguation page
- Jongwoo Park 0002 — Korea Institute of Machinery and Materials, Daejeon, South Korea (and 1 more)
- Jongwoo Park 0003 — Stony Brook University, NY, USA
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2010 – 2019
- 2019
- [c10]Kanghyun Choi, Jongwon Lee, Jongwoo Park:
Nonlinear Mixed Model and Reliability Prediction for OLED Luminance Degradation. IRPS 2019: 1-4 - [c9]Jongwon Lee, Sangkil Kim, Yoonsuk Choi, Jongwoo Park:
Process Variation of Pixel Definition and Effects of Flexible OLED Luminance Degradation. IRPS 2019: 1-6 - 2018
- [c8]Heejin Kim, Hayeon Shin, Jiyoung Park, Youngtae Choi, Jongwoo Park:
Statistical modeling and reliability prediction for transient luminance degradation of flexible OLEDs. IRPS 2018: 3 - 2015
- [c7]Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park:
Systematical study of 14nm FinFET reliability: From device level stress to product HTOL. IRPS 2015: 2 - [c6]Jongwoo Park, Miji Lee, Hanbyul Kang, Wooram Ko, Eunkyeong Choi, Junsik Im, Minwoo Lee, Dohwan Chung, Jinchul Park, Sangchul Shin, Sangwoo Pae:
Effects of front-end-of line process variations and defects on retention failure of flash memory: Charge loss/gain mechanism. IRPS 2015: 2 - [c5]Jongwoo Park, Jungpyo Hong, Miji Lee, Dongyoon Sun, Kyung Kang, Taesung Kim, Seungwon Kim, Sujin Kwon, Changkyu Joo, Sangsu Ha, Wooyeon Kim, Jongsu Ryu, Sangwoo Pae:
Contact resistance of solder bump with low cost photosensitive polyimide for high performance SoC. IRPS 2015: 3 - [c4]Soonyoung Lee, Ilgon Kim, Sungmock Ha, Cheong-sik Yu, Jinhyun Noh, Sangwoo Pae, Jongwoo Park:
Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices. IRPS 2015: 4 - [c3]Jongwoo Park, Miji Lee, Kyunghwan Min, J.-K. Choi, Changkyu Joo, S.-C. Park, Hanbyul Kang, Sangwoo Pae:
Reliability of fine pitch COF: Influence of surface morphology and CuSn intermetallic compound formation. IRPS 2015: 4 - [c2]Hyunsuk Chun, In Hak Baick, Sangsu Ha, Eunmi Kwon, Seungbae Lee, Seil Kim, Sangwoo Pae, Jongwoo Park:
CPI reliability and EMI benefit for MIM CAP embedded C4 package. IRPS 2015: 5 - [c1]Choelhwyi Bae, Sangwoo Pae, Cheong-sik Yu, Kangjung Kim, Yongshik Kim, Jongwoo Park:
SRAM stability design comprehending 14nm FinFET reliability. IRPS 2015: 13
Coauthor Index
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