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2010 – 2019
- 2014
[c5]Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo
, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi:
A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing. ISCAS 2014: 1588-1591- [c4]Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Tadahiko Sugibayashi:
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications. ISSCC 2014: 184-185
2000 – 2009
- 2009
- [j7]Ryusuke Nebashi, Noboru Sakimura, Tadahiko Sugibayashi, Naoki Kasai:
Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros. IEICE Trans. Electron. 92-C(4): 417-422 (2009) - [j6]Noboru Sakimura, Tadahiko Sugibayashi, Ryusuke Nebashi, Naoki Kasai:
Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCs. IEEE J. Solid State Circuits 44(8): 2244-2250 (2009) - [c3]Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Shinsaku Saito, Yuichi Ito, Sadahiko Miura, Yuko Kato, Kaoru Mori, Yasuaki Ozaki, Yosuke Kobayashi, Norikazu Ohshima, Keizo Kinoshita, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Katsumi Suemitsu, Shunsuke Fukami, Hiromitsu Hada, Tadahiko Sugibayashi, Naoki Kasai:
A 90nm 12ns 32Mb 2T1MTJ MRAM. ISSCC 2009: 462-463 - 2008
- [c2]Noboru Sakimura, Tadahiko Sugibayashi, Ryusuke Nebashi, Naoki Kasai:
Nonvolatile Magnetic Flip-Flop for standby-power-free SoCs. CICC 2008: 355-358 - 2007
- [j5]Takeshi Honda, Noboru Sakimura, Tadahiko Sugibayashi, Naoki Kasai, Hiromitsu Hada, Shuichi Tahara:
Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode. IEICE Trans. Electron. 90-C(2): 531-535 (2007) - [j4]Tadahiko Sugibayashi, Takeshi Honda, Noboru Sakimura, Shuichi Tahara, Naoki Kasai:
MRAM Applications Using Unlimited Write Endurance. IEICE Trans. Electron. 90-C(10): 1936-1940 (2007) - [j3]Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken-ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Norikazu Ohshima, Hiromitsu Hada, Nobuyuki Ishiwata, Naoki Kasai, Shuichi Tahara:
A 16-Mb Toggle MRAM With Burst Modes. IEEE J. Solid State Circuits 42(11): 2378-2385 (2007) - 2005
- [j2]Naoki Kasai:
Special Section on Microelectronic Test Structures. IEICE Trans. Electron. 88-C(5): 781 (2005) - [j1]Takeo Matsuki, Kazuyoshi Torii, Takeshi Maeda, Yasushi Akasaka, Kiyoshi Hayashi, Naoki Kasai, Tsunetoshi Arikado:
Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs. IEICE Trans. Electron. 88-C(5): 804-810 (2005) - 2001
- [c1]Hideo Toyoshima, Sota Kobayashi, Junichi Yamada, Tohru Miwa, Hiroki Koike, Hidenori Takeuchi, Hidemitsu Mori, Naoki Kasai, Yukihiko Maejima, Nobuhira Tanabe, Toru Tatsumi, Hiromitsu Hada:
FeRAM device and circuit technologies fully compatible with advanced CMOS. CICC 2001: 171-178
Coauthor Index
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