"Processes of p-GaN Gate HEMTs for High-efficiency and High-reliability ..."

Junting Chen et al. (2023)

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DOI: 10.1109/ASICON58565.2023.10396181

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-16

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Junting Chen, Chengcai Wang, Zuoheng Jiang, Mengyuan Hua:
Processes of p-GaN Gate HEMTs for High-efficiency and High-reliability Applications. ASICON 2023: 1-4

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