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"Effects of unintended dopants on I-V characteristics of the double-gate ..."

Peicheng Li et al. (2011)

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DOI: 10.1109/ASICON.2011.6157310

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-25

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Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu, Tingao Tang:
Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study. ASICON 2011: 735-738

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