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ORCIDGuangxi Hu
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- affiliation: Fudan University, Shanghai, China
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2020 – today
- 2023
[j5]Guodong Qi, Xinyu Chen, Guangxi Hu, Peng Zhou, Wenzhong Bao, Ye Lu:
Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors. Sci. China Inf. Sci. 66(2) (2023)- 2022
- [c7]Wang Shule, Yulong Yan, Haoming Chu, Guangxi Hu, Zhi Zhang, Zhuo Zou, Lirong Zheng:
Hand Gesture Recognition Using IR-UWB Radar with Spiking Neural Networks. AICAS 2022: 423-426
2010 – 2019
- 2019
- [c6]Jiarui Bao, Shuyan Hu, Guangxi Hu, Laigui Hu
, Ran Liu, Lirong Zheng:
A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance. ASICON 2019: 1-4 - 2017
- [c5]Haisheng Qian, Guangxi Hu, Laigui Hu, Xing Zhou, Ran Liu, Li-Rong Zheng:
Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. ASICON 2017: 249-251 - 2016
- [j4]Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, Li-Rong Zheng:
Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs. Microelectron. J. 50: 60-65 (2016) - 2015
- [c4]Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, Li-Rong Zheng:
Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs. ASICON 2015: 1-4 - 2013
- [c3]Ping Xiang, Zhihao Ding, Guangxi Hu, Hui Chol Ri, Ran Liu, Lingli Wang, Xing Zhou:
Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET. ASICON 2013: 1-4 - 2012
- [j3]Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Lingli Wang, Tingao Tang:
Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs. Microelectron. J. 43(11): 894-897 (2012) - 2011
- [j2]Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, Tingao Tang:
An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs. Microelectron. J. 42(3): 515-519 (2011) - [j1]Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang:
Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs. Microelectron. J. 42(10): 1164-1168 (2011) - [c2]Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang:
Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs. ASICON 2011: 555-557 - [c1]Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu, Tingao Tang:
Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study. ASICON 2011: 735-738
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