"Quantification of Dopant Profiles in SiGe HBT Devices."

Eric J. Jones et al. (2018)

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DOI: 10.1109/BCICTS.2018.8551114

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-27

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Eric J. Jones, Jonathan D. Poplawsky, Donavan Leonard, Keith Chung, Kevin Mercurio, Paul Brabant, Thomas Adam, Patrick B. Shea, Thomas Knight:
Quantification of Dopant Profiles in SiGe HBT Devices. BCICTS 2018: 255-258

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