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"A novel 10T SRAM bit-cell with high static noise margin and low power ..."

Hossein Khosravi et al. (2024)

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DOI: 10.1109/CCWC60891.2024.10427792

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-29

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Hossein Khosravi, Ricardo Carmona-Galán, Jorge Fernández-Berni, Nabeeh Kandalaft:
A novel 10T SRAM bit-cell with high static noise margin and low power consumption for binary In-Memory Computing. CCWC 2024: 728-733

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