"High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down ..."

D. A. J. Millar et al. (2018)

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DOI: 10.1109/DRC.2018.8442150

access: closed

type: Conference or Workshop Paper

metadata version: 2024-07-12

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D. A. J. Millar, X. Li, U. Peralagu, M. J. Steer, I. M. Pavey, Guilherme Gaspar, M. Schmidt, Paul K. Hurley, I. G. Thayne:
High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach. DRC 2018: 1-2

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