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"Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating ..."

Omar B. Mohammed, Leonard F. Register, Sanjay Kumar Banerjee (2019)

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DOI: 10.1109/DRC46940.2019.9046452

access: closed

type: Conference or Workshop Paper

metadata version: 2024-07-29

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Omar B. Mohammed, Leonard F. Register, Sanjay Kumar Banerjee:
Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors. DRC 2019: 129-130

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