"Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes."

Akio Takatsuka et al. (2018)

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DOI: 10.1109/DRC.2018.8442267

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-01

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Akio Takatsuka, Kohei Sasaki, Daiki Wakimoto, Quang Tu Thieu, Yuki Koishikawa, Jun Arima, Jun Hirabayashi, Daisuke Inokuchi, Yoshiaki Fukumitsu, Akito Kuramata, Shigenobu Yamakoshi:
Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes. DRC 2018: 1-2

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