"Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ..."

Quyen Tran et al. (2024)

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DOI: 10.1109/DRC61706.2024.10605410

access: closed

type: Conference or Workshop Paper

metadata version: 2024-08-16

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Quyen Tran, John Hayden, Joseph Casamento, Jon-Paul Maria, Thomas N. Jackson:
Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel. DRC 2024: 1-2

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