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"Employing work function enginnering and asymmetric gate oxide in ..."
Mahsa Tahermaram et al. (2009)
- Mahsa Tahermaram, Mahdi Vadizadeh
, A. Eslamzadeh, Morteza Fathipour:
Employing work function enginnering and asymmetric gate oxide in nano-scale source-heterojunction-MOS-transistor. EIT 2009: 196-201

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