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"3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low ..."

Jaeyeop Na, Kwansoo Kim (2022)

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DOI: 10.1109/ICEIC54506.2022.9748589

access: closed

type: Conference or Workshop Paper

metadata version: 2022-04-21

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Jaeyeop Na, Kwansoo Kim:
3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss. ICEIC 2022: 1-4

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