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"Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb ..."

M. Azzaz et al. (2015)

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DOI: 10.1109/ESSDERC.2015.7324765

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-11

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  dblp key:
  - conf/essderc/AzzazBVGJCCBJDA15
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  - https://dblp.org/rec/conf/essderc/AzzazBVGJCCBJDA15
M. Azzaz, A. Benoist, Elisa Vianello, Daniele Garbin, Eric Jalaguier, Carlo Cagli, C. Charpin, Stefania Bernasconi, Simon Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, Philippe Candelier, Claire Fenouillet-Béranger, Luca Perniola:
Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. ESSDERC 2015: 266-269

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