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"Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells."

Nivard Aymerich et al. (2011)

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DOI: 10.1145/1973009.1973065

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-11

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  dblp key:
  - conf/glvlsi/AymerichGRCG11
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  - https://dblp.org/rec/conf/glvlsi/AymerichGRCG11
Nivard Aymerich, Shrikanth Ganapathy, Antonio Rubio, Ramon Canal, Antonio González:
Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells. ACM Great Lakes Symposium on VLSI 2011: 277-282

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