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"Dependence of SiO2 Gate Leakage Current on Annealing Temperature of ..."

Wun-Ciang Jhang, Pin-Han Chen, Chih-Chieh Hsu (2022)

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DOI: 10.1109/ICCE-TAIWAN55306.2022.9869260

access: closed

type: Conference or Workshop Paper

metadata version: 2022-09-09

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  - conf/icce-tw/JhangCH22
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Wun-Ciang Jhang, Pin-Han Chen, Chih-Chieh Hsu:
Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor. ICCE-TW 2022: 569-570

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