"High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement ..."

Ting-En Lin et al. (2023)

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DOI: 10.1109/ICCE-TAIWAN58799.2023.10226885

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-08

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Ting-En Lin, Shen-Li Chen, Zhi-Wei Liu, Xing-Chen Mai, Xiu-Yuan Yang, Yu-Jie Chung:
High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities. ICCE-Taiwan 2023: 225-226

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