"Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as ..."

Elisa Vianello et al. (2018)

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DOI: 10.1109/ICECS.2018.8617869

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Elisa Vianello, Denys R. B. Ly, Selina La Barbera, Thomas Dalgaty, Niccolo Castellani, Gabriele Navarro, Guillaume Bourgeois, Alexandre Valentian, Etienne Nowak, Damien Querlioz:
Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks. ICECS 2018: 561-564

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