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"A 1 Tb 4b/cell 5th-Generation 3D-NAND Flash Memory with 2ms tPROG, 110us ..."

Doo-Hyun Kim (2021)

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DOI: 10.1109/IMW51353.2021.9439600

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-19

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Doo-Hyun Kim:
A 1 Tb 4b/cell 5th-Generation 3D-NAND Flash Memory with 2ms tPROG, 110us tR and 1.2Gb/s/pin Interface. IMW 2021: 1-4

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