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"New reliability mechanisms in memory design for sub-22nm technologies."

Nivard Aymerich et al. (2011)

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DOI: 10.1109/IOLTS.2011.5993820

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-11

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  dblp key:
  - conf/iolts/AymerichABCCFGHMMPRRVVWZ11
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  persistent URL:
  - https://dblp.org/rec/conf/iolts/AymerichABCCFGHMMPRRVVWZ11
Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, Binjie Cheng, Joan Figueras, Antonio González, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanausú Ramírez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, Xingsheng Wang, Paul Zuber:
New reliability mechanisms in memory design for sub-22nm technologies. IOLTS 2011: 111-114

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