"A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate ..."

Tibor Grasser et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529465

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-29

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Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3

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