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"Comprehensive device and product level reliability studies on advanced ..."

D. S. Huang et al. (2018)

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DOI: 10.1109/IRPS.2018.8353651

access: closed

type: Conference or Workshop Paper

metadata version: 2019-01-22

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D. S. Huang, J. H. Lee, Y. S. Tsai, Y. F. Wang, Y. S. Huang, C. K. Lin, Ryan Lu, Jun He:
Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors. IRPS 2018: 6

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