"A systematic study of gate dielectric TDDB in FinFET technology."

Hyunjin Kim et al. (2018)

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DOI: 10.1109/IRPS.2018.8353577

access: closed

type: Conference or Workshop Paper

metadata version: 2019-01-22

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Hyunjin Kim, Minjung Jin, Hyun-Chul Sagong, Jinju Kim, Ukjin Jung, Minhyuck Choi, Junekyun Park, Sangchul Shin, Sangwoo Pae:
A systematic study of gate dielectric TDDB in FinFET technology. IRPS 2018: 4

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