"Bias Temperature Instability Depending on Body Bias through Buried Oxide ..."

Ryo Kishida, Ikuo Suda, Kazutoshi Kobayashi (2021)

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DOI: 10.1109/IRPS46558.2021.9405121

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-05

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Ryo Kishida, Ikuo Suda, Kazutoshi Kobayashi:
Bias Temperature Instability Depending on Body Bias through Buried Oxide (BOX) Layer in a 65 nm Fully-Depleted Silicon-On-Insulator Process. IRPS 2021: 1-6

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