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"Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and ..."

Joseph P. Kozak et al. (2020)

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DOI: 10.1109/IRPS45951.2020.9128330

access: closed

type: Conference or Workshop Paper

metadata version: 2020-11-06

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  - conf/irps/KozakZLNZ20
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  - https://dblp.org/rec/conf/irps/KozakZLNZ20
Joseph P. Kozak, Ruizhe Zhang, Jingcun Liu, Khai D. T. Ngo, Yuhao Zhang:
Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching. IRPS 2020: 1-6

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