"Evidence of Back-Gating and its Impact on Breakdown in GaN-on-Si HEMTs ..."

Mohammad Ateeb Munshi, Mehak Ashraf Mir, Mayank Shrivastava (2025)

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DOI: 10.1109/IRPS48204.2025.10983137

access: closed

type: Conference or Workshop Paper

metadata version: 2025-06-04

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Mohammad Ateeb Munshi, Mehak Ashraf Mir, Mayank Shrivastava:
Evidence of Back-Gating and its Impact on Breakdown in GaN-on-Si HEMTs with Carbon Doped Buffer Under Pulsed Conditions. IRPS 2025: 24

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