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"ESD Robustness of GaN-on-Si Power Devices under Substrate Biases by means ..."

Wen Yang, Nicholas Stoll, Jiann-Shiun Yuan (2020)

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DOI: 10.1109/IRPS45951.2020.9129538

access: closed

type: Conference or Workshop Paper

metadata version: 2020-07-30

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  dblp key:
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Wen Yang, Nicholas Stoll, Jiann-Shiun Yuan:
ESD Robustness of GaN-on-Si Power Devices under Substrate Biases by means of TLP/VFTLP Tests. IRPS 2020: 1-5

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