"Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire ..."

Yoko Yoshimura, Kensuke Ota, Masumi Saitoh (2018)

> Home

Details and statistics

DOI: 10.1109/IRPS.2018.8353606

access: closed

type: Conference or Workshop Paper

metadata version: 2019-01-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/YoshimuraOS18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/YoshimuraOS18
Yoko Yoshimura, Kensuke Ota, Masumi Saitoh:
Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor. IRPS 2018: 5

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.